Optoelectronic Device Buffer Layer Dark Current Reduction

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Solution Overview

Problem

Organic optoelectronic devices suffer from high dark current and low external quantum efficiency due to internal impurities in organic materials, leading to reduced sensitivity and accuracy in the visible light region.

Innovation Solution

Incorporating buffer layers with specific inorganic oxides like MoOx, ZnOx, TiOx, VOx, TaOx, and WOx between the photoelectric conversion layer and electrodes, and performing oxygen plasma treatment to adjust the stoichiometric ratio and reduce dark current, while maintaining high photoelectric conversion efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If organic materials are used in the photoelectric conversion layer, then the device can be manufactured with ease and flexibility, but dark current increases and sensitivity deteriorates

Engineering Contradiction:
Improveease of manufactureVSAvoidsensitivity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

An inorganic buffer layer is introduced as an intermediary between the organic photoelectric conversion layer and the electrodes. This buffer layer mediates the interaction by providing a stable interface that prevents harmful effects from internal impurities in the organic material, thereby reducing dark current while maintaining the ease of manufacturing organic optoelectronic devices.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The device structure combines organic and inorganic materials to create a composite system. The photoelectric conversion layer uses organic materials for ease of manufacture, while the buffer layer uses inorganic materials to suppress dark current and improve sensitivity, achieving a synergistic effect that resolves the contradiction between manufacturing ease and device performance.

Inventive Principle:
Principle #40Composite materials

2Reliability

If buffer layers are added to reduce dark current, then sensitivity improves, but device complexity increases

Engineering Contradiction:
ImprovesensitivityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Instead of modifying the entire device structure, the solution applies a localized buffer layer only at the critical interface between the photoelectric conversion layer and the electrodes. This local intervention specifically addresses the dark current issue at the electrode interface without unnecessarily complicating other parts of the device.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The device is segmented into distinct functional layers with the buffer layer serving as a separate, dedicated component between the photoelectric conversion layer and electrodes. This segmentation allows the buffer layer to perform its specific function of reducing dark current independently, making the complexity manageable and the device structure modular.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly reduces dark current and enhances sensitivity and performance of optoelectronic devices, improving their accuracy and efficiency in converting photocurrent, particularly in the visible light region.

Implementation Method 1

a first buffer layer between the photoelectric conversion layer and the first electrode and a second buffer layer between the photoelectric conversion layer and the second electrode

Methodology Applied
Scientific EffectHole blocking:

Implementation Method 2

performing oxygen plasma treatment to adjust the stoichiometric ratio

Methodology Applied
Scientific EffectPlasma treatment: Plasma

Implementation Method 3

a photoelectric conversion layer between the first electrode and the second electrode

Methodology Applied
Scientific EffectPhotoelectric conversion: Photovoltaic Effect

Data Source

PatentUS9590121B2Optoelectronic device, and image sensor and electronic device including the same
Publication Date: 2017.03.07 SAMSUNG ELECTRONICS CO LTD
  • US9590121B2 patent drawing
  • US9590121B2 patent drawing
  • US9590121B2 patent drawing

AI summary

An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1<3.0), ZnOx2 (1.0≦x2<2.0), TiOx3 (1.5≦x3<2.0), VOx4 (1.5≦x4<2.0), TaOx5 (1.0≦x5<2.5), WOx6 (2.0<x6<3.0), and a combination thereof.