Optoelectronic Device Integration on Bulk Silicon
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Solution Overview
Problem
Conventional optoelectronic devices require separate chips for optical and electronic components, leading to increased surface area and complexity, and the integration of MOS devices on silicon-on-insulator substrates is time-consuming and costly.
Innovation Solution
An optoelectronic device is developed where an optical waveguide, coupler, and metal-oxide-semiconductor (MOS) device are integrated into a single chip on a bulk-Si substrate, using a half-boat-shaped material layer and deep trench isolation structure, with the optical waveguide overlapping the isolation structure and material layer, and the MOS device formed in a separate area, allowing for efficient integration and reduced surface area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If optical devices and electronic devices are formed on separate chips and connected through conductive lines, then the devices can be manufactured using conventional processes, but the surface area occupied increases and the system becomes complicated
Solution Approach 1:
The patent merges optical devices (optical waveguide, coupler) and electronic devices (MOS device) onto a single bulk-Si chip. The optical waveguide is formed by creating a refractive index difference between the substrate and a material layer, while the MOS device is formed in a separate area on the same chip, eliminating the need for separate chips and conductive line connections.
2Adaptability or versatility
If MOS device is formed on silicon-on-insulator substrate, then optical waveguide can be formed on the same substrate, but the MOS device modeling requires fine tuning which is time-consuming and costly
Solution Approach 1:
Instead of forming the optical waveguide on a silicon-on-insulator substrate as in conventional approaches, the patent inverts the approach by forming both the optical waveguide and MOS device on a bulk-Si substrate. This eliminates the need for fine-tuning MOS device modeling on SOI substrates while still achieving successful integration of optical and electronic devices on the same chip.
3Device complexity
If optical waveguide and MOS device are integrated on the same chip, then the system is simplified and surface area is reduced, but the fabrication process becomes more complex
Solution Approach 1:
The patent divides the chip into distinct functional areas: a first area for the optical device (optical waveguide and coupler) and a second area for the electronic device (MOS device). The deep trench isolation structure further segments these areas, allowing each component to be manufactured using existing semiconductor processes while maintaining clear functional separation on the integrated chip.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the system, reduces surface area usage, and allows for cost-effective fabrication by using existing semiconductor equipment, avoiding the need for fine-tuning MOS device modeling on silicon-on-insulator substrates.
Implementation Method 1
The refractive index of the half-boat-shaped material layer is lower than that of the substrate
Data Source
AI summary
An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.