Optoelectronic Chip Detachment Using Temporary Protective Coating

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Solution Overview

Problem

Existing methods for producing optoelectronic semiconductor chips often result in damage to the semiconductor chips during production, leading to reduced yield and efficiency.

Innovation Solution

The method involves providing an optoelectronic structure with a growth support and semiconductor layer sequence, applying it to a carrier, coating with a protective material that covers the growth support and semiconductor layer sequence, and detaching the growth support, thereby protecting the semiconductor layer sequence from damage during the process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the growth substrate is separated from optoelectronic structures without protective coating, then the production process can proceed, but the semiconductor chips are at risk of damage during detachment

Engineering Contradiction:

Improvechip integrityVSAvoiddamage risk during detachment

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A protective coating is applied to the optoelectronic structures before the detachment process to cushion and protect them from damage during the separation of the growth substrate. This prior protective measure directly addresses the damage risk without interfering with the detachment function.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The protective coating acts as an intermediary layer between the growth substrate and the optoelectronic structures, providing protection during detachment while allowing the detachment process to proceed. The coating mediates the interaction between the separating substrate and the fragile semiconductor structures.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If a protective material is applied to cover the optoelectronic structure, then damage risk during detachment is reduced, but the production process complexity increases

Engineering Contradiction:

Improvechip integrityVSAvoidproduction process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The protective coating is applied in advance as a preliminary action before the detachment process. This preliminary protection step is integrated into the production sequence, allowing the main detachment function to proceed without additional complexity while ensuring chip integrity is maintained throughout the process.

Inventive Principle:

Principle #10Preliminary action

3Reliability

If the protective material remains on the chip after detachment, then continued protection is provided, but it interferes with the chip's functionality

Engineering Contradiction:

Improvechip protectionVSAvoidchip functionality

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The protective coating is designed to be temporary and is removed after the detachment process completes. This discarding of the protective material after it has served its purpose ensures that the chip's functionality is not interfered with, while still providing necessary protection during the critical detachment phase.

Inventive Principle:

Principle #34Discarding and recovering

Solution Approach 2:

The protective coating provides preliminary protection against damage during detachment, and its temporary nature prevents any subsequent negative effects on chip functionality. The anti-action (protection) is applied only when needed and removed when it would become harmful.

Inventive Principle:

Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method reduces the risk of damage to semiconductor chips during production, increases yield, and ensures the protective material is temporarily in place only during detachment, ensuring no permanent interference with the chip's functionality.

Implementation Method 1

a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support

Methodology Applied

Scientific EffectEpitaxy: Epitaxy

Data Source

PatentUS9076941B2Method of producing at least one optoelectronic semiconductor chip

Publication Date: 2015.07.07 OSRAM OLED

AI summary

A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.