Optoelectronic Semiconductor Chip Filter Layer Design

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Solution Overview

Problem

Optoelectronic semiconductor chips with thick transparent conductive layers for p-side electrical contacting face a trade-off between good electrical conductivity and adverse optical properties, leading to increased radiation absorption.

Innovation Solution

The design incorporates a semiconductor body with a mesa-shaped region and a multi-layered filter layer between the contact and conductive layers, utilizing dielectric materials like silicon nitride and transparent conductive oxides to minimize absorption losses by controlling the refractive indices and angles of radiation incidence.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a thick transparent conductive layer is used for p-side electrical contacting, then good electrical conductivity is achieved, but radiation absorption increases

Engineering Contradiction:
Improveelectrical conductivityVSAvoidradiation absorption
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The contact structure is divided into multiple functional layers: a first contact layer for electrical contacting, a filter layer for optical filtering, and a second contact layer for current distribution. This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between electrical conductivity and radiation absorption.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A filter layer made of dielectric material is introduced as an intermediary between the first contact layer and the second conductive layer. This filter layer mediates the interaction between electricity and optics by reflecting unwanted radiation while allowing electrical current to pass through, thus reducing radiation absorption in the conductive layers.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a thick contact layer is used to ensure good electrical conductivity, then electrical contact quality improves, but optical properties deteriorate due to increased radiation absorption

Engineering Contradiction:
Improveelectrical contact qualityVSAvoidradiation transmission
Core Design Contradiction:
ReliabilityVSIllumination intensity

Solution Approach 1:

The contact structure is divided into multiple functional layers: a first contact layer for electrical contacting, a filter layer for optical filtering, and a second contact layer for current distribution. This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between electrical conductivity and radiation absorption.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different layers are assigned different material properties and functions: the first contact layer provides electrical contact, the filter layer provides optical filtering with specific refractive index, and the second contact layer provides current distribution. Each layer has locally optimized quality for its specific function.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces absorption losses by ensuring that only radiation hitting the filter layer at steep angles reaches the conductive layer, while flat components are reflected back, maintaining good electrical conductivity and minimizing radiation absorption in the thicker conductive layer.

Implementation Method 1

flat components are reflected back

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

controlling the refractive indices and angles of radiation incidence

Methodology Applied
Scientific EffectRefraction: Refraction

Data Source

PatentUS10475965B2Optoelectronic semiconductor chip and method for manufacturing an optoelectronic semiconductor chip
Publication Date: 2019.11.12 OSRAM OLED
  • US10475965B2 patent drawing
  • US10475965B2 patent drawing
  • US10475965B2 patent drawing

AI summary

An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.