Optoelectronic Semiconductor Chip Reflective Layer Sequence
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Optoelectronic semiconductor chips face efficiency losses due to low reflectivity of contact metallization, which absorbs reflected electromagnetic radiation, leading to photon recycling and reduced performance in optical systems.
Innovation Solution
The integration of a first reflective layer sequence with higher reflectivity than the contact metallization, applied to the surface away from the radiation passage area, and a second reflective layer sequence on the current distribution metallization, both comprising metals and dielectric layers to enhance reflectivity and prevent radiation absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact metallization is applied to the radiation passage area for electrical contact, then electrical functionality is achieved, but reflectivity decreases and radiation is absorbed
Solution Approach 1:
The patent applies a composite structure consisting of contact metallization combined with a reflective layer sequence. The contact metallization (e.g., gold, aluminum, or copper) provides electrical conductivity, while the reflective layer sequence (comprising dielectric layers with different refractive indices) provides high reflectivity. This composite structure allows the contact area to simultaneously achieve both electrical functionality and optical reflectivity, preventing energy loss while maintaining electrical contact capability.
2Loss of energy
If reflective layer sequence is applied to contact metallization to increase reflectivity, then radiation reflection is improved, but device complexity increases
Solution Approach 1:
The patent optimizes the reflective layer sequence by carefully selecting and controlling the optical parameters of dielectric layers, specifically their refractive indices and thicknesses. By adjusting these parameters, the system achieves high reflectivity (above 90%) in the target wavelength range while keeping the layer sequence compact and manufacturable. This parameter optimization allows achieving high performance without excessive structural complexity.
Solution Approach 2:
The patent transitions from considering only the electrical contact function to adding the optical reflection dimension. By designing the contact area as a multi-layer structure that addresses both electrical and optical requirements simultaneously, the solution resolves the contradiction between improved reflection and increased complexity through integrated design.
3Reliability
If current distribution metallization is applied to the radiation passage area for uniform current distribution, then current distribution is improved, but reflectivity decreases and radiation is absorbed
Solution Approach 1:
The patent applies the same composite material principle to current distribution metallization. The current distribution layer (providing uniform current distribution across the radiation passage area) is combined with a reflective layer sequence. This composite structure enables the current distribution tracks to maintain their electrical function while achieving high optical reflectivity, preventing radiation absorption by the metallization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases the reflectivity of the contact and current distribution tracks, preventing radiation loss and improving the efficiency of optoelectronic components by reflecting electromagnetic radiation back into the optical system, thereby enhancing the overall performance of optoelectronic semiconductor chips and components.
Implementation Method 1
a first reflective layer sequence (2b) which is applied to that surface of the contact metallization (2a) which is remote from the radiation passage area (3), the first reflective layer sequence being provided for reflecting electromagnetic radiation reflected back to the contact metallization
Data Source
Figure 1A~1C
Figure 2A~2C
Figure 3~4
AI summary
Disclosed is an optoelectronic semiconductor chip (1) comprising a radiation-permeable surface (3), a metallic contact coating (2a) that is applied to the radiation-permeable surface (3), and a first series of reflecting layers (2b) which is applied to the surface of the metallic contact coating (2a) facing away from the radiation-permeable surface (3). Also disclosed is an optoelectronic component comprising such a chip.