Optoelectronic Semiconductor Chip with Segmented Defect Regions
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Solution Overview
Problem
Current methods for producing optoelectronic semiconductor chips do not effectively achieve high internal and external quantum efficiency, particularly in radiation-emitting devices like LEDs, due to limitations in defect management and radiation reflection.
Innovation Solution
A method involving the creation of a nucleation layer, a mask layer with islands, a coalescence layer with trapezoidal ribs, a multiple quantum well structure, and a mirror with metallic contact regions and dielectric mirror islands for total reflection, along with substrate detachment and etching roughening, to enhance current distribution and radiation coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional production methods are used for optoelectronic semiconductor chips, then the manufacturing process is simple, but the internal and external quantum efficiency is low
Solution Approach 1:
The chip structure is segmented into distinct functional zones: defect-rich regions containing vertical defect structures for current injection, and defect-free regions for light emission. This segmentation allows current to be injected through defects while preventing them from reaching the emission zones, thereby improving quantum efficiency without complicating the overall manufacturing process
Solution Approach 2:
An intermediate layer or structure is introduced between the current injection path and the light emission region. This intermediary component blocks or redirects current paths to prevent direct contact between injected current and the emission zone, reducing non-radiative recombination and improving internal quantum efficiency
2Power
If defect-rich regions are used for current injection, then current density is improved, but radiation efficiency may be compromised
Solution Approach 1:
The chip is divided into functionally separate regions: defect-rich areas serve exclusively for current injection while defect-free areas are dedicated to light emission. This spatial segmentation ensures that high current density can be achieved through defect regions without compromising radiation efficiency in the emission regions
Solution Approach 2:
The harmful effect of defects on radiation efficiency is eliminated by extracting or isolating the current injection function into separate defect-rich regions. The defects are 'taken out' from the emission path, allowing current to be injected efficiently while preventing it from directly impacting the light emission process
3Manufacturing precision
If a mask layer with mask islands is applied, then the coalescence layer forms trapezoidal ribs with lattice structure, but the manufacturing complexity increases
Solution Approach 1:
The mask layer with mask islands is applied in advance during the growth process to pre-defin e the desired trapezoidal rib lattice structure of the coalescence layer. This preliminary patterning action enables precise control of the coalescence layer morphology without requiring complex post-processing steps
Solution Approach 2:
The mask layer structure serves as a template or copy that is transferred to the coalescence layer during growth. The mask islands replicate the desired lattice pattern, allowing the coalescence layer to inherit this precise geometric structure through the growth process itself
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves current density and radiation efficiency by utilizing defect-rich regions for vertical current paths and reducing reflection losses, resulting in increased internal and external quantum efficiency of the semiconductor chip.
Implementation Method 1
the mask islands of the mask layer or a partial layer of the mask islands have/has an absorptance of at least 60% for at least a partial region of the spectrum between 240 nm and 480 nm seen in transmission
Implementation Method 2
mirror islands for the total reflection of radiation generated in the multiple quantum well structure
Data Source
AI summary
A method of producing an optoelectronic semiconductor chip includes in order: A) creating a nucleation layer on a growth substrate, B) applying a mask layer on to the nucleation layer, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, D) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and creating a roughening by etching.