Optoelectronic Chip with Tilted Semiconductor Layers for Light Extraction
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Solution Overview
Problem
Current optoelectronic devices, such as LEDs, face challenges in miniaturization and efficient light extraction, leading to limitations in pixel contrast and overall performance.
Innovation Solution
The integration of an optoelectronic chip with a phosphor plate and a bonding layer, where the optoelectronic chip is attached to the phosphor plate with the second semiconductor layer between the phosphor plate and the first semiconductor layer, and electrodes on the side remote from the phosphor plate, along with an index smoothing layer to enhance light extraction and pixel isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the optoelectronic chip is miniaturized to improve device compactness, then device size is reduced, but light extraction efficiency deteriorates
Solution Approach 1:
The patent transitions from planar light extraction to three-dimensional light extraction by tilting the semiconductor layers at angles (e.g., 45 degrees) relative to the substrate. This dimensional change allows light to be extracted from multiple angles and depths, significantly improving light extraction efficiency in miniaturized devices where traditional planar extraction is insufficient.
Solution Approach 2:
The patent employs curved or tilted interfaces between semiconductor layers rather than flat planar interfaces. The tilted active region and curved extraction surfaces increase the optical path length and enable light to escape from multiple directions, overcoming the size-related limitations of light extraction in compact devices.
2Manufacturing precision
If the pixel size is reduced to improve display resolution, then pixel density is increased, but pixel contrast deteriorates
Solution Approach 1:
The patent divides the optoelectronic substrate into multiple independently controllable pixels with distinct tilted semiconductor layers. Each pixel can be individually addressed and controlled, maintaining high contrast ratios even when pixels are densely packed. The segmentation is achieved through separate electrode connections to each pixel's semiconductor structure.
Solution Approach 2:
Each pixel is equipped with locally optimized tilted semiconductor layers and extraction surfaces tailored to its specific position and function. This local customization allows each pixel to maximize its light extraction efficiency and contrast ratio independently, even in high-density configurations where uniform structures would compromise overall performance.
3Strength
If a bonding layer is added to attach the optoelectronic chip to the phosphor plate, then bonding strength is improved, but device complexity increases
Solution Approach 1:
The patent merges the bonding layer function with the existing semiconductor layer structure by using the tilted semiconductor layers themselves as the bonding interface. The semiconductor layers are directly bonded to the phosphor plate without requiring separate bonding materials, thereby achieving strong adhesion while minimizing additional structural complexity.
Solution Approach 2:
The tilted semiconductor layers serve multiple functions simultaneously: they act as the active optoelectronic region for light generation, provide the bonding interface to the phosphor plate, and enable enhanced light extraction. This multi-functionality eliminates the need for separate dedicated bonding layers, reducing overall device complexity while maintaining bonding strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency, enhances pixel contrast, and allows for the creation of compact, high-performance optoelectronic devices with improved heat dissipation and stable characteristics.
Implementation Method 1
a blue LED chip comprising a semiconductor material in an appropriate band gap region may be combined with e.g. a yellow phosphor that is capable of emitting yellow light when being excited by the light of the blue LED chip
Implementation Method 2
an index smoothing layer between the optoelectronic chip and the bonding layer
Data Source
AI summary
An optoelectronic device comprises a phosphor plate, an optoelectronic chip comprising a layer stack of a first optoelectronic semiconductor layer and a second optoelectronic semiconductor layer, a first electrode, and a second electrode. The optoelectronic chip is attached to the phosphor plate, so that the second optoelectronic semiconductor layer is arranged between the phosphor plate and the first optoelectronic semiconductor layer. The first electrode and the second electrode are arranged on a first main surface of the first optoelectronic semiconductor layer on a side remote from the phosphor plate. The second electrode directly contacts the first optoelectronic semiconductor layer.