Optoelectronic Device Conductive Layer Oxidation Protection

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Solution Overview

Problem

The increasing cost of gold (Au) for electrode materials in optoelectronic devices and the ease of oxidation of silver (Ag) by etching solutions pose challenges in maintaining the integrity and efficiency of solar cell components, particularly in the formation of metal oxide layers during the manufacturing process.

Innovation Solution

The use of a conductive layer with a top surface, a bottom surface, and a side surface, covered by first and second barrier layers comprising Pd, and a first metal oxide layer formed by oxidizing these layers, which protects the conductive layer from etching solutions and reduces oxidation, while also employing a bonding layer for wire bonding and a metal layer to minimize contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If silver (Ag) is used as conductive layer material to reduce cost, then manufacturing cost is reduced, but oxidation resistance deteriorates

Engineering Contradiction:
ImprovecostVSAvoidoxidation resistance
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

A Pd barrier layer is introduced as an intermediary between the Ag conductive layer and the etching solution. This barrier layer prevents direct contact between Ag and oxidizing agents, thereby protecting the conductive layer from oxidation while allowing the etching process to proceed effectively on the semiconductor layer.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrode structure employs a composite material system consisting of Ag conductive layer combined with Pd barrier layer. This composite structure leverages the high conductivity of Ag while utilizing the oxidation resistance of Pd, achieving both cost reduction and reliability improvement.

Inventive Principle:
Principle #40Composite materials

2Reliability

If Pd barrier layer is added to protect conductive layer, then oxidation resistance is improved, but device complexity increases

Engineering Contradiction:
Improveoxidation resistanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The electrode structure is segmented into distinct functional layers: the Ag conductive layer for electrical conduction and the Pd barrier layer for oxidation protection. This segmentation allows each layer to perform its specific function optimally while maintaining a relatively simple overall structure that can be integrated into existing solar cell manufacturing processes.

Inventive Principle:
Principle #1Segmentation

3Reliability

If conductive layer is protected from oxidation, then reliability is improved, but etching effectiveness may be reduced

Engineering Contradiction:
ImproveintegrityVSAvoidetching effectiveness
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The Pd barrier layer provides localized protection specifically at the interface between the conductive layer and the etching solution. The etching process remains effective on the semiconductor layer while the barrier layer selectively prevents oxidation of the conductive layer, achieving both protection and manufacturing effectiveness.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively prevents oxidation of the conductive layer, maintains the integrity of the optoelectronic device, and ensures efficient etching of the ohmic contact layer, resulting in a wider ohmic contact area and improved device performance.

Implementation Method 1

providing a first metal oxide layer by oxidizing the first barrier layer, the conductive layer, and the second barrier layer

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS9252297B2Optoelectronic device and the manufacturing method thereof
Publication Date: 2016.02.02 ENNOSTAR CORP
  • US9252297B2 patent drawing
  • US9252297B2 patent drawing
  • US9252297B2 patent drawing

AI summary

An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.