Optoelectronic Semiconductor Electrical Connection Layer Stack
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Solution Overview
Problem
Existing optoelectronic semiconductor components face challenges in being produced inexpensively and ensuring reliability during operation, particularly due to issues with electrical connections that are prone to diffusion and degradation during soldering processes.
Innovation Solution
The development of an optoelectronic semiconductor component with an electrical connection point formed as a layer stack, including a contact layer, barrier layers, and a protective layer, where the layers are arranged perpendicularly to the semiconductor chip, and produced exclusively by physical vapor deposition, providing a thin and stable connection that prevents diffusion and maintains reliability under high temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional electrical connection methods are used, then production cost is reduced, but reliability during operation deteriorates due to diffusion and degradation during soldering processes
Solution Approach 1:
The electrical connection point is segmented into multiple functional layers: contact layer (131), barrier layers (132a), intermediate layers (132b), and protective layer (133). Each layer performs a specific function - the contact layer provides electrical connection, barrier layers prevent diffusion, intermediate layers enhance adhesion, and protective layer offers mechanical protection. This segmentation allows optimization of each layer's properties independently, achieving high reliability without excessive cost.
Solution Approach 2:
The electrical connection point uses composite material structure with different materials stacked together. The contact layer uses conductive material, barrier layers use diffusion-resistant materials, intermediate layers use adhesive materials, and protective layer uses mechanically strong material. This composite structure combines the advantages of different materials to achieve both reliability and cost-effectiveness.
2Reliability
If electroplating is used to produce the electrical connection point, then material properties are improved, but production complexity and cost increase
Solution Approach 1:
The patent extracts and eliminates the electroplating step from the production process. Instead of using electroplating to create the electrical connection point, the invention uses physical vapor deposition (PVD) to deposit the layered structure directly. This removal of the electroplating process simplifies production while maintaining the functional integrity of the electrical connection through the alternative PVD-based layered approach.
Solution Approach 2:
The patent replaces the electrochemical process (electroplating) with a physical process (physical vapor deposition). The PVD method deposits material in a vacuum environment, creating the layered structure through physical condensation rather than electrochemical reaction. This substitution simplifies the production process by eliminating the need for electroplating equipment and associated chemical processes.
3Reliability
If thick electrical connection layers are used, then electrical conductivity is improved, but heat dissipation efficiency deteriorates
Solution Approach 1:
The electrical connection point applies local quality by making the layers thin only where electrical connection is needed (at the contact point with the semiconductor chip), while maintaining sufficient thickness only for the specific functions required at each location. The contact layer is thin but conductive, barrier layers are thin but effective, and protective layer provides just enough mechanical protection. This localized thinning maintains electrical functionality while improving heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the production of optoelectronic semiconductor components that are inexpensive, reliable, and resistant to soldering heat, ensuring uniform current supply and efficient heat dissipation, while avoiding the need for electroplating and reducing material costs.
Implementation Method 1
produced exclusively by physical vapor deposition
Data Source
AI summary
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.