Optoelectronic Component Contact Isolation

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Solution Overview

Problem

Optoelectronic components, such as light-emitting diodes or photodiodes, face challenges in maintaining high quantum efficiency due to surface recombination centers formed during the etching of through-connections, which negatively impact internal quantum efficiency, and require low serial resistance to maximize high-current efficiency.

Innovation Solution

The design includes contact isles for the first layer that are spaced from through-connections laterally, guiding the main current path away from them, and a thick second layer with low sheet resistance to reduce lateral electric resistance, along with micro-lenses and a barrier layer to enhance radiation coupling and recombination probability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If through-connections are etched through the active layer, then electrical contact to the second layer is achieved, but surface recombination centers are formed that reduce internal quantum efficiency

Engineering Contradiction:
Improveelectrical contact reliabilityVSAvoidinternal quantum efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The electrical contact path is segmented into two separate locations: through-connections provide contact to the second layer while contact isles on the first layer provide contact to the first layer. This segmentation prevents the formation of continuous etch paths through the active layer, eliminating surface recombination centers while maintaining electrical connectivity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first layer acts as an intermediary layer that provides a contact surface for contact isles without requiring etching through it. This intermediary structure allows electrical access to the first layer while preserving the integrity of the active layer below, avoiding the formation of harmful surface recombination centers.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If contact isles are placed close to through-connections, then device complexity is reduced, but current paths may not be optimally controlled

Engineering Contradiction:
Improvecontact structure complexityVSAvoidcurrent path control
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

Different regions of the device are assigned different functions: contact isles are positioned in specific locations on the first layer to collect current locally, while through-connections are positioned in other regions to provide electrical access to the second layer. This local differentiation optimizes current path control without requiring excessive complexity.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration suppresses non-radiative recombination, improves current path control, and increases quantum efficiency by directing radiation efficiently and maintaining low serial resistance, thereby enhancing the overall performance of optoelectronic components.

Implementation Method 1

The active layer is, e.g., configured to generate or absorb radiation in the ultraviolet range and/or blue spectral range and/or visible spectral range and/or infrared range

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

the radiation surface can be patterned

Methodology Applied
Scientific EffectRefraction: Refraction

Data Source

PatentUS10347792B2Optoelectronic component
Publication Date: 2019.07.09 OSRAM OLED
  • US10347792B2 patent drawing
  • US10347792B2 patent drawing

AI summary

An optoelectronic component is disclosed. In an embodiment the component includes a semiconductor layer sequence with a first layer, a second layer and an active layer arranged between the first and second layer, wherein the active layer directly borders the first and second layer, a radiation surface directly bordering the second layer, one or more contact isles for electrically contacting the first layer and one or more through-connections for electrically contacting of the second layer, wherein the through-connections are formed through the first layer and the active layer and open into the second layer, wherein the contact isles are located laterally next to one another directly on a rear side of the first layer facing away from the radiation surface, wherein the through-connections are arranged in regions between the contact isles in a top view of the rear side.