Optoelectronic Semiconductor Contact Layout for Uniform Light Emission

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Solution Overview

Problem

Existing optoelectronic semiconductor elements, such as LEDs, face challenges in improving light emission efficiency and mechanical stability due to the arrangement of contact elements and passivation layers, which can affect the uniformity of current injection and outcoupling of electromagnetic radiation.

Innovation Solution

The optoelectronic semiconductor element features a layer stack with a first semiconductor layer patterned to expose part of a second semiconductor layer, where identical intermediate layers connect the contact elements to the semiconductor layers, ensuring uniform current injection and enhanced mechanical stability through a specific arrangement of contact elements and passivation layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If contact elements are arranged at different heights on the first semiconductor layer, then the manufacturing process is simpler, but tilting effects occur that distort the radiation pattern

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidradiation pattern uniformity
Core Design Contradiction:
Ease of manufactureVSShape

Solution Approach 1:

The patent applies the equipotentiality principle by arranging both contact elements at the same height above the first semiconductor layer. This creates a symmetric, level configuration that prevents tilting effects and ensures uniform radiation patterns in all directions, while still allowing for a relatively simple manufacturing process through standard lithography and deposition techniques.

Inventive Principle:
Principle #12Equipotentiality

2Ease of manufacture

If the first semiconductor layer is left unpatterned, then the manufacturing process is simpler, but current injection uniformity is poor

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidcurrent injection uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies segmentation by patterning the first semiconductor layer into distinct regions with different thicknesses or compositions. This creates zones that facilitate uniform current distribution across the active area, ensuring consistent current injection while maintaining a manufacturable structure through standard photolithography patterning processes.

Inventive Principle:
Principle #1Segmentation

3Reliability

If different intermediate layers are used between contact elements and semiconductor layer, then contact optimization is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvecontact element performanceVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies homogeneity by using identical intermediate layers between both contact elements and the first semiconductor layer. This symmetric configuration ensures consistent electrical properties and contact performance while significantly simplifying the manufacturing process, as the same layer deposition and patterning steps can be reused for both contacts.

Inventive Principle:
Principle #33Homogeneity

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves the light emission efficiency and mechanical stability of the semiconductor element by ensuring uniform current injection and efficient outcoupling of electromagnetic radiation, while preventing tilting effects that could distort the radiation pattern.

Implementation Method 1

If electrons and holes recombine with one another in the area of the pn junction, for example, because a corresponding voltage is applied, electromagnetic radiation is generated.

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS11855245B2Optoelectronic semiconductor component comprising a first and second contact element, and method for producing the optoelectronic semiconductor component
Publication Date: 2023.12.26 AMS OSRAM INT GMBH
  • US11855245B2 patent drawing
  • US11855245B2 patent drawing
  • US11855245B2 patent drawing

AI summary

An optoelectronic semiconductor element may include an optoelectronic semiconductor chip. The optoelectronic semiconductor chip may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element connected to the first semiconductor layer in an electrically conductive manner, and a second contact element connected to the second semiconductor layer in an electrically conductive manner. The first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack. The first semiconductor layer to where the second semiconductor layer is exposed. The first contact element is arranged over the first semiconductor layer, and the second contact element is arranged over the first semiconductor layer.