Optoelectronic Semiconductor Contact Layout for Light Outcoupling
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Solution Overview
Problem
Existing optoelectronic semiconductor devices face challenges in improving electrical contacting of semiconductor layers, which affects the efficiency of electromagnetic radiation generation and current distribution in light-emitting regions.
Innovation Solution
The semiconductor device features a first semiconductor layer stack with patterned regions, including protruding and connecting regions, where the connecting regions have a lateral extension greater than 5 times the mean lateral extension of the protruding regions, allowing for efficient current spreading and improved electrical connectivity, and the outermost semiconductor layer is partially removed or thinned in the light-emitting region to enhance radiation outcoupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the contact element covers a large area of the semiconductor layer stack, then the electrical contact resistance is reduced, but the light-emitting area is reduced and light outcoupling is hindered
Solution Approach 1:
The contact element is divided into multiple contact regions arranged in a grid pattern, with each region making contact at specific locations rather than covering a continuous large area. This segmentation allows electrical contact while preserving light emission from the regions between contact elements
Solution Approach 2:
The semiconductor layer stack features an array of through-holes that allow light to pass through the contact element structure. These porous-like structures enable simultaneous electrical contact and light transmission, resolving the contradiction between contact area and light outcoupling
2Ease of manufacture
If the semiconductor layer stack has a uniform flat surface, then the manufacturing process is simple, but the light outcoupling efficiency is low due to total internal reflection
Solution Approach 1:
The top surface of the semiconductor layer stack features an array of hemispherical or dome-shaped protrusions instead of a flat surface. These curved structures reduce total internal reflection and improve light outcoupling efficiency while maintaining a relatively simple manufacturing process through standard lithography and etching
3Device complexity
If the contact element is placed close to the light-emitting region, then the device structure is compact, but the current distribution becomes non-uniform and light emission is affected
Solution Approach 1:
The contact element is segmented into multiple smaller contact regions distributed across the semiconductor layer stack surface. This segmentation allows the contact element to be positioned relatively close to the light-emitting region while maintaining uniform current distribution through the distributed contact points
Solution Approach 2:
Different regions of the semiconductor layer stack have different properties: the contact regions have high electrical conductivity for current injection, while the regions between contacts maintain optimal properties for light emission. This local differentiation allows compact design without compromising current uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the outcoupling efficiency of electromagnetic radiation and reduces voltage drop, leading to improved performance and efficiency of the optoelectronic semiconductor device.
Implementation Method 1
The connecting regions are adjacent to regions in which part of the first main surface of the first semiconductor layer stack is adjacent to the first contact element, and have a lateral extension which is greater than 5 times the mean lateral extension of the protruding regions
Implementation Method 2
Part of that part of the first main surface which is not adjacent to the first contact element represents a light emitting region
Data Source
AI summary
The invention relates to an optoelectronic semiconductor component, comprising a first semiconductor layer stack, which comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The optoelectronic semiconductor component additionally has a first contact element and a second contact element. The first semiconductor layer stack and the second semiconductor layer are arranged one above the other. The second semiconductor layer is electrically connected to the second contact element. A part of a first main surface of the first semiconductor layer stack adjoins the first contact element, and a part of the first main surface of the first semiconductor layer stack is structured such that both a plurality of protruding regions as well as connection regions are formed. The connection regions adjoin regions in which a part of the first main surface of the first semiconductor layer stack adjoins the first contact element, and the connection regions have a lateral extension which is greater than five times the average lateral extension of the protruding regions.