Optoelectronic Semiconductor Device Frame Heat Dissipation
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Solution Overview
Problem
Existing optoelectronic semiconductor devices face challenges in achieving uniform optical properties and brightness due to non-homogeneous coverage of electromagnetic radiation emission, often resulting in inhomogeneous color and brightness impressions across different angles, and are prone to thermal degradation affecting their lifespan.
Innovation Solution
The optoelectronic semiconductor device incorporates a frame surrounding the semiconductor chip to maintain a uniform thickness of the conversion layer, utilizing a frame with higher thermal conductivity than the conversion layer to dissipate heat and ensure complete coverage of the chip's surfaces by the conversion layer, which can be made of transparent materials like glass, thereby maintaining uniform emission and extending device lifespan.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the semiconductor chip extends higher than the surrounding structure, then the conversion layer can completely cover the chip surfaces, but the thickness of the conversion layer becomes non-uniform resulting in inhomogeneous color and brightness impressions
Solution Approach 1:
The patent introduces a frame structure that extends in the lateral dimension to create a stepped configuration. This dimensional change allows the conversion layer to be applied at different heights, ensuring complete coverage of the semiconductor chip surfaces while maintaining uniform thickness through the frame's structural support
Solution Approach 2:
The device structure is segmented into different height levels: the semiconductor chip extends higher than the frame, creating distinct zones. This segmentation allows the conversion layer to be applied uniformly on the frame surface while still achieving complete coverage of the chip's lateral surfaces, resolving the contradiction between coverage and uniformity
2Reliability
If the conversion layer completely covers the semiconductor chip surfaces, then optical properties are improved, but thermal degradation increases affecting device lifespan
Solution Approach 1:
The frame acts as an intermediary structure between the semiconductor chip and the conversion layer. It provides a thermal management interface that allows heat dissipation while enabling the conversion layer to maintain uniform thickness and complete coverage, thus improving optical performance without compromising device lifespan
Solution Approach 2:
The patent applies different properties to different regions: the frame provides structural support and thermal management, while the conversion layer provides optical conversion. This local differentiation allows the conversion layer to be optimized for optical performance in specific zones without compromising the overall thermal management of the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures a homogeneous color and brightness impression across various emission angles and reduces thermal degradation, enhancing the device's optical performance and longevity by maintaining uniformity and efficient heat dissipation.
Implementation Method 1
utilizing a frame with higher thermal conductivity than the conversion layer to dissipate heat
Implementation Method 2
The semiconductor chip can be configured to emit electromagnetic radiation during operation of the semiconductor device
Implementation Method 3
The conversion layer can be configured to convert a wavelength of the electromagnetic radiation emitted by the semiconductor chip
Data Source
AI summary
An optoelectronic semiconductor device and a method for forming an optoelectronic semiconductor device are disclosed. In an embodiment a device includes a carrier having a main plane of extension, at least one semiconductor chip arranged on the carrier, a frame arranged on the carrier and surrounding the semiconductor chip in lateral directions which are parallel to the main plane of extension of the carrier and a conversion layer covering the at least one semiconductor chip and the frame, wherein the at least one semiconductor chip extends further in a vertical direction than the frame, wherein the semiconductor chip is configured to emit electromagnetic radiation, and wherein the frame and the semiconductor chip are spaced from each other in the lateral directions by a gap.