Optoelectronic Device with Integrated Semiconductor Regions
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Solution Overview
Problem
Current optoelectronic devices with light-emitting diodes, particularly those using microwires or nanowires, face challenges in reducing size, manufacturing complexity, and cost due to separate steps for electronic circuits and their integration with optoelectronic devices.
Innovation Solution
The development of an optoelectronic device with integrated semiconductor regions and light-emitting diodes formed on a substrate, where the semiconductor regions are created through ion implantation or homo-epitaxy, allowing for the integration of electronic components like diodes and transistors directly with the light-emitting diodes, reducing the need for separate circuitry and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If electronic circuits are produced separately and fixed to the support, then the optoelectronic device can be manufactured with standard processes, but the size of the electronic system increases and manufacturing complexity increases
Solution Approach 1:
The patent merges the electronic circuit functions directly into the semiconductor substrate by creating doped regions (first and second doped regions) within the same substrate that hosts the light-emitting diode. This integration eliminates separate electronic circuit components and their assembly, thereby reducing system size and manufacturing complexity while maintaining ease of manufacture through standardized semiconductor processing techniques.
2Reliability
If electronic circuits are produced separately and fixed to the support, then circuit functionality can be independently optimized, but the manufacturing cost increases due to additional manufacturing and connection steps
Solution Approach 1:
The patent combines electronic circuit functions with the light-emitting diode structure by forming doped regions directly in the semiconductor substrate. This integration reduces the number of manufacturing steps by eliminating separate circuit production and connection processes, thereby lowering manufacturing costs while maintaining circuit functionality through properly designed doped regions that provide necessary electrical characteristics.
3Adaptability or versatility
If the substrate is divided into separate layers, then integration of multiple components is facilitated, but the manufacturing process complexity increases
Solution Approach 1:
The patent segments the semiconductor substrate into functionally distinct doped regions (first doped region for light emission, second doped region for electronic circuit functions) within a single continuous substrate structure. This segmentation approach enables multiple component functions to be integrated while avoiding the complexity of physically separating the substrate into multiple layers, as each doped region can be independently designed and manufactured using standard semiconductor doping processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of optoelectronic devices with reduced size and manufacturing complexity, facilitating industrial-scale production at lower costs by integrating electronic components and light-emitting diodes on a single substrate.
Implementation Method 1
a first semiconductor region electrically connected to the substrate, doped with the first type of conductivity or with a second type of conductivity opposite to the first type
Implementation Method 2
a first set of first light-emitting diodes resting on the first semiconductor region
Data Source
Figure 1~5
Figure 6~9
Figure 10~14
AI summary
The invention relates to an optoelectronic device (5) comprising a semiconductor substrate (10) that is optionally doped with a first type of conductivity; a first semiconductor region (14) that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set (A) of first light-emitting diodes (DEL) resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion (36) in contact with the first semiconductor region.