Optoelectronic Device Light Extraction via Thin Nitride Layer
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Solution Overview
Problem
Optoelectronic devices face inefficiencies in light extraction due to absorption by substrates and elongated elements, limiting the performance and perceived light output.
Innovation Solution
A transparent substrate and intermediate element with a nitride of a transition metal, such as titanium or niobium, are used, with a thickness less than or equal to 9nm, along with a mirror to redirect emitted light for improved restitution, enhancing light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a substrate and intermediate element are used to support the light-emitting member, then structural stability is improved, but light absorption increases and light extraction efficiency deteriorates
Solution Approach 1:
The patent changes the optical parameter (transparency) of the substrate and intermediate element by selecting specific materials and controlling the thickness of the intermediate element to be less than 9 nm. This parameter change reduces light absorption while maintaining structural support functionality.
Solution Approach 2:
The intermediate element acts as a mediator between the substrate and the light-emitting member. It provides structural support while being optically transparent to minimize light absorption. The intermediate element mediates between the conflicting requirements of mechanical stability and optical transparency.
2Area of stationary object
If the intermediate element thickness is increased to improve coverage and support, then structural support is improved, but light absorption increases and transparency deteriorates
Solution Approach 1:
The patent optimizes the thickness parameter of the intermediate element to be less than 9 nm. This parameter change achieves a balance where the intermediate element provides sufficient coverage and structural support while remaining thin enough to maintain high optical transparency and minimize light absorption.
3Ease of manufacture
If conventional materials are used for the intermediate element, then ease of manufacture is improved, but light extraction efficiency deteriorates due to absorption
Solution Approach 1:
The patent changes the material composition parameter of the intermediate element to use transparent materials such as transparent conductive oxides (ITO, IZO, AZO) or transparent insulating materials (silicon oxide, silicon nitride). This material change reduces light absorption while maintaining ease of manufacture through standard deposition techniques.
Solution Approach 2:
The patent uses composite material structures where the intermediate element is made of transparent conductive oxides or transparent insulating materials. These composite materials provide both structural support and optical transparency, resolving the contradiction between manufacturing ease and light extraction efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases the amount of light restored and perceived by the observer, maximizing light output while minimizing absorption within the device.
Implementation Method 1
the intermediate element, transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm
Implementation Method 2
a mirror arranged so as to orient at least part of said light issuing from the light-emitting member in the direction of said restitution zone
Data Source
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AI summary
The invention relates to an optoelectronic device (1) comprising a substrate (2) and a light-emitting body (3) comprising a long element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is inserted between the substrate (2) and the closest longitudinal end of the long element (4) to the substrate (2). Furthermore, the substrate (2) is transparent to said light, and the intermediate element (5), also transparent to said light, comprises at least one nitride of a transition metal, and has a thickness which is less than, or equal to, 9nm.