Optoelectronic Component Mirror Layer Recess Design
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Solution Overview
Problem
Optoelectronic components with vias do not emit radiation in the region of the vias and the surrounding area, due to the mirror layer being retracted laterally during production, resulting in a non-radiation-emitting region between the via and the mirror layer.
Innovation Solution
The mirror layer is drawn into the recess, allowing it to cover a portion of the side wall and extend partially transversely to the active layer, increasing the radiation-emitting area by reflecting electromagnetic radiation generated adjacent to the recess.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a via is introduced to electrically contact the first semiconductor layer, then electrical contact is achieved, but a non-radiation-emitting region is created around the via
Solution Approach 1:
The patent converts the harmful effect of the via (creating a non-radiation-emitting region) into a beneficial effect by strategically positioning the via to enable electrical contact while minimizing its impact on the radiation-emitting area. The via is integrated into the design in a way that its necessary presence does not significantly compromise the overall light emission efficiency.
Solution Approach 2:
The patent applies local quality by creating a via structure with specific local characteristics - the via is positioned and dimensioned to provide necessary electrical contact locally while the surrounding areas maintain their radiation-emitting properties. This localized approach allows the via to fulfill its electrical function without extensively affecting the overall light emission area.
2Ease of manufacture
If the mirror layer is retracted laterally during production, then the mirror layer can be formed, but a non-radiation-emitting region is created between the via and the mirror layer
Solution Approach 1:
The patent applies preliminary action by pre-planning the mirror layer positioning and via placement before production. The design is configured in advance to ensure that when the mirror layer is formed with lateral retraction, the resulting configuration still maintains adequate radiation-emitting area. The via and mirror layer positions are predetermined to minimize the non-radiation-emitting region.
3Area of stationary object
If the mirror layer is drawn into the recess, then the radiation-emitting area is increased, but the mirror layer structure becomes more complex
Solution Approach 1:
The patent applies dimensionality change by having the mirror layer extend into the vertical dimension (into the recess) rather than only occupying the lateral plane. This allows the mirror layer to cover more area and increase the radiation-emitting region while managing the structural complexity through controlled vertical integration rather than complex lateral arrangements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the efficiency of the optoelectronic component by reducing the non-radiation-emitting region and increasing the reflectivity of the mirror layer, which is at least 80% in the visible spectral range.
Implementation Method 1
The mirror layer is drawn into the recess, allowing it to cover a portion of the side wall and extend partially transversely to the active layer, increasing the radiation-emitting area by reflecting electromagnetic radiation generated adjacent to the recess
Data Source
AI summary
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence.