Optoelectronic Semiconductor Device Pixel Color Control

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Solution Overview

Problem

Existing optoelectronic semiconductor devices lack the ability to continuously adjust the color location of emitted radiation, limiting their versatility and application in lighting and display technologies.

Innovation Solution

A method of manufacturing optoelectronic semiconductor devices involves applying different converter materials to predetermined pixels of a semiconductor chip, allowing for continuous adjustment of the color location of emitted radiation by structuring a photostructurable layer and applying phosphor-based converter materials to specific illumination areas, enabling independent control of each pixel.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a single converter material is applied to the entire semiconductor chip, then the manufacturing process is simple, but the color location of emitted radiation cannot be adjusted

Engineering Contradiction:
Improvecolor location adjustabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The semiconductor chip is divided into multiple illumination areas (pixels), and different converter materials are applied to different areas. This segmentation enables independent color control for each area, achieving continuous color location adjustment while maintaining a relatively simple manufacturing process using conventional photolithography and screen printing techniques.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different converter materials with specific photoluminescence properties are applied to different illumination areas based on the desired color output. Each area has locally optimized converter material composition and thickness to achieve the target color location, enabling continuous color adjustment across the chip.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If converter materials are applied to all illumination areas, then color adjustment capability is achieved, but manufacturing precision and material placement control become difficult

Engineering Contradiction:
Improvecolor temperature adjustment rangeVSAvoidconverter material placement precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

A photostructurable layer is applied to the semiconductor chip before applying the converter materials. This layer is selectively removed in desired patterns to create masks that guide precise converter material placement. The preliminary structuring of the photo layer enables accurate spatial control of converter materials without requiring high-precision direct placement techniques.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The photostructurable layer acts as an intermediary element between the semiconductor chip and the converter materials. It provides a convenient platform for precise pattern definition and material placement control, simplifying the manufacturing process while achieving high spatial precision in converter material distribution.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If multiple converter materials are applied separately to different pixels, then continuous color adjustment is enabled, but the manufacturing time and process steps increase

Engineering Contradiction:
Improvecontinuous color adjustment capabilityVSAvoidmanufacturing throughput
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

Multiple converter materials are applied in a single manufacturing step using screen printing or similar techniques, rather than applying each material separately in sequential steps. This merging of multiple material applications into one operation maintains continuous color adjustment capability while significantly improving manufacturing throughput and reducing process time.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The manufacturing process uses universal techniques (screen printing, photolithography) that can handle multiple converter materials simultaneously, making the process versatile and efficient. The same equipment and methods used for single-material application are extended to multi-material application, maintaining productivity while achieving continuous color adjustment.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the creation of semiconductor devices where the color temperature of emitted light can be continuously adjusted, enhancing their application in lighting and display technologies by enabling the production of devices that can emit a wide range of colors and white light with varying color temperatures.

Implementation Method 1

a photostructurable first photo layer is applied to the radiation side. In a step C) the first photo layer is photostructured, wherein holes are formed in the first photo layer in the region of first illumination areas

Methodology Applied
Scientific EffectPhotopolymerisation: Photopolymerisation

Implementation Method 2

different converter materials are applied to predetermined pixels of a semiconductor chip... allowing for continuous adjustment of the color location of emitted radiation

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS20200295236A1Method of Manufacturing an Optoelectronic Semiconductor Device and Optoelectronic Semiconductor Device
Publication Date: 2020.09.17 AMS OSRAM INT GMBH
  • US20200295236A1 patent drawing
  • US20200295236A1 patent drawing
  • US20200295236A1 patent drawing

AI summary

A method for manufacturing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment a method includes applying a photostructurable first photo layer on the radiation side of a semiconductor layer sequence, photostructuring the first photo layer, wherein holes are formed in the first photo layer in regions of first illumination areas, applying a first converter material to the structured first photo layer, wherein the first converter material partially or completely fills the holes, thereby forming first converter elements in the holes, the first converter elements covering the associated first illumination areas, removing the first photo layer; and applying a second converter material to the radiation side at least in regions of second illumination areas, the second illumination areas being different from the first illumination areas.