Optoelectronic Component Potting Layout for Higher Light Extraction
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Solution Overview
Problem
Optoelectronic components face inefficiencies in light extraction and emission due to the absorption of primary and secondary radiation by electrical contacts and side surfaces, leading to reduced performance in devices like lighting systems.
Innovation Solution
The use of a first potting material that covers side surfaces of the semiconductor chip and an adhesion promoter that fixes the conversion element to the chip, while being transparent to radiation, suppresses light conduction through side surfaces and directs radiation towards the top surface, enhancing light extraction and efficiency by reflecting radiation away from electrical contacts and side surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If electrical contacts and side surfaces are exposed, then electrical connection is achieved, but radiation absorption occurs reducing light extraction efficiency
Solution Approach 1:
The patent extracts the harmful function of electrical contacts and side surfaces by covering them with potting material, removing their ability to absorb radiation while preserving their electrical connection function through careful material selection and placement
Solution Approach 2:
The potting material serves as an intermediary substance that fills the space around the semiconductor chip, blocking radiation paths to electrical contacts and side surfaces while allowing electrical connections to function through the material
2Illumination intensity
If conversion element is added to convert primary radiation to secondary radiation, then spectral output is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the conversion element with the semiconductor chip assembly by positioning it in direct contact with the chip's radiation emitting surface, integrating multiple functions (radiation conversion and structural support) into a compact configuration that simplifies manufacturing
Solution Approach 2:
The conversion element is pre-positioned and secured to the semiconductor chip before final assembly steps, allowing subsequent potting material application to complete the封装 in a single streamlined process
3Loss of energy
If potting material covers side surfaces, then radiation absorption by electrical contacts is prevented, but light conduction through side surfaces is suppressed
Solution Approach 1:
The patent applies different properties to different regions: the potting material has radiation-absorbing properties where it contacts electrical contacts and side surfaces, while maintaining optical transparency in regions where light conduction is desired, achieving localized functional optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves light extraction and efficiency by preventing radiation absorption at electrical contacts and side surfaces, increasing the overall performance of optoelectronic components in lighting devices.
Implementation Method 1
reflecting radiation away from electrical contacts and side surfaces
Implementation Method 2
an adhesion promoter with which the conversion element is fixed on the radiation emitting surface of the semiconductor chip
Implementation Method 3
a conversion element that converts primary radiation into secondary electromagnetic radiation
Data Source
AI summary
In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.