Optoelectronic Component Manufacturing via Pre-Detachment Lithography

The patent applies lithography steps on the emission side before detaching the growth substrate, rather than after. This preliminary action allows the semiconductor layers to remain stress-supported by the substrate during lithography, preventing run-out problems while still enabling connection contact formation. The growth substrate is removed only after the lithography steps are completed, eliminating the stress change issue that would otherwise cause lateral variable changes and yield losses.

The patent performs all necessary lithography steps and metal layer formation while the growth substrate is still in place, providing structural support and stress stability. Only after these operations are completed is the growth substrate detached, at which point the metal layers are already formed and accessible. This sequence maintains layer structure stability during critical manufacturing steps while still achieving the goal of accessing metal layers for connection contacts.

The patent consolidates all lithography steps required for connection contact formation into the pre-detachment phase, when the growth substrate provides mechanical support and prevents run-out. By completing all necessary patterning operations before substrate removal, the invention eliminates the yield losses that would otherwise occur from performing additional lithography steps after detachment, when stress changes cause lateral variable changes and manufacturing defects.