Optoelectronic Component with Same-Side Contacts and Reflector

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Solution Overview

Problem

Existing optoelectronic components face inefficiencies in radiation coupling-out due to the presence of large-area, absorbing contact elements on the semiconductor body, which hinder the effective emission of radiation power.

Innovation Solution

The design features a semiconductor body with a semiconductor layer sequence and two electrical contacts where one contact is arranged between the semiconductor body and the other, ensuring electrical isolation and minimizing the presence of metal elements on one side, along with a reflector layer to enhance radiation reflection and reduce absorption, thereby improving the coupling-out efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If large-area contact elements are used for electrical contact and current expansion, then electrical contact reliability is improved, but radiation coupling-out efficiency deteriorates due to absorption by metal elements

Engineering Contradiction:
Improveelectrical contact reliabilityVSAvoidradiation coupling-out efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent applies dimensionality change by moving both electrical contacts to the same side of the semiconductor body, specifically the side opposite to the radiation coupling-out surface. This spatial rearrangement allows the contacts to be positioned in a different dimensional configuration (both on top surface rather than distributed on opposite sides), enabling large-area contacts for reliable electrical connection while keeping the radiation coupling-out surface free of absorbing metal elements. The overlapping arrangement of contacts on the same side achieves both electrical reliability and radiation efficiency.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If contacts are arranged on opposite sides of the active region, then electrical isolation is simplified, but the coupling-out surface contains absorbing elements that reduce radiation power

Engineering Contradiction:
Improveelectrical isolationVSAvoidradiation power
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent rearranges the spatial configuration of contacts from opposite sides to the same side, specifically positioning both contacts on the side opposite to the radiation coupling-out surface. This dimensional reconfiguration allows electrical isolation to be achieved through insulation layers between overlapping contacts on the same side, while simultaneously keeping the radiation coupling-out surface free of metal elements that would absorb radiation and reduce power output.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces insulation layers as intermediary elements between the two contacts that are arranged on the same side. These insulation layers mediate the electrical isolation requirement, preventing short circuits between the overlapping contacts while allowing both contacts to be positioned on the same side of the semiconductor body, thus maintaining radiation coupling-out efficiency.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If multiple contact elements are distributed across the semiconductor body, then current distribution is improved, but the number of absorbing elements increases reducing overall efficiency

Engineering Contradiction:
Improvecurrent distribution efficiencyVSAvoidradiation absorption
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The patent merges the functions of multiple contact elements into a consolidated arrangement where both contacts are positioned on the same side of the semiconductor body. By combining the contact functions in this specific spatial configuration, the patent achieves effective current distribution through the semiconductor body while minimizing the total number of metal elements present on the radiation coupling-out surface, thereby reducing radiation absorption and improving overall efficiency.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration increases the radiation power coupling-out efficiency by minimizing absorption and maximizing reflection, allowing for enhanced radiation emission while maintaining efficient electrical contact and current distribution.

Implementation Method 1

a reflector layer is arranged on the semiconductor body... By means of the reflector layer, radiation exiting the semiconductor body and striking the reflector layer can be reflected back into the semiconductor body

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

an insulation layer is arranged between the two contacts in the sub-region in which the first contact is arranged between the semiconductor body and the second contact, via which the two contacts are electrically insulated from one another

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Data Source

PatentEP2149161B1Optoelectronic component
Publication Date: 2017.01.04 OSRAM OPTO SEMICON GMBH & CO OHG
  • EP2149161B1 patent drawing
  • EP2149161B1 patent drawing
  • EP2149161B1 patent drawing

AI summary

The invention relates to an optoelectronic component comprising a semiconductor body (2) which has a series of semiconductor layers with an active region (4) that is suitable for generating radiation, a reflective layer (72) situated on the semiconductor body and two electric contacts (7,8). A first contact (7) of said contacts on the side of the active region that faces the reflective layer is connected in an electrically conductive manner to the semiconductor body, the second contact (8) of said contacts on the side of the active region that faces away from the reflective layer is connected in an electrically conductive manner to the semiconductor body and the reflective layer lies between a sub-region of the second contact and the semiconductor body.