Optoelectronic Semiconductor Chip Non-Uniform Contact Layer
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Solution Overview
Problem
Optoelectronic semiconductor chips often experience inhomogeneous current density distribution near contact elements, leading to varying radiation intensity and temperature peaks, which cause severe degradation of the semiconductor body.
Innovation Solution
The semiconductor chip design features a semiconductor body with a p-type and n-type region, a contact layer, a supply layer, and feed-through elements arranged to ensure a homogeneous current density distribution by maintaining consistent total series resistance across current paths, preventing current crowding and radiation losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current is injected through a thin contact layer, then electrical contact is achieved, but current crowding occurs causing inhomogeneous current density distribution
Solution Approach 1:
The contact layer is segmented into multiple regions with different thicknesses. Thinner contact layers are positioned in regions where current density is lower, while thicker contact layers are positioned in regions where current density is higher, thereby compensating for the current crowding effect and achieving more uniform current density distribution across the contact area
Solution Approach 2:
The contact layer is designed with spatially varying thickness to provide local quality adjustment. By making the contact layer thinner in high current density regions and thicker in low current density regions, the invention optimizes current distribution locally across different areas of the semiconductor chip
2Use of energy by moving object
If inhomogeneous current density distribution occurs, then current can be injected, but radiation intensity varies across the semiconductor chip
Solution Approach 1:
The contact layer is divided into multiple thickness regions that correspond to different areas of the semiconductor chip. This segmentation allows for tailored current distribution that compensates for variations in radiation intensity across the chip, ensuring more uniform optical output
Solution Approach 2:
The thickness parameter of the contact layer is varied spatially across the semiconductor chip. By changing the contact layer thickness from thin to thick in different regions, the invention adjusts the electrical parameters to compensate for optical parameter variations, achieving uniform radiation intensity
3Power
If current density peaks occur, then current flows through the contact element, but temperature peaks and severe degradation occur
Solution Approach 1:
The contact layer is segmented with varying thickness to distribute current more evenly across different regions. This prevents current density peaks that would otherwise lead to temperature peaks and severe degradation of the semiconductor body
Solution Approach 2:
The invention preemptively addresses potential current crowding and temperature peak issues by designing a non-uniform contact layer thickness profile before operation. This preventive measure cushions against the formation of harmful current and temperature peaks, protecting the semiconductor body from degradation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves a uniform current density and radiation intensity across the chip, reducing semiconductor body degradation and enhancing operational stability with consistent performance.
Implementation Method 1
In the operation of the semiconductor chip, the active zone emits electromagnetic radiation, for example in the visible, ultraviolet or infra-red spectral range
Data Source
AI summary
An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.