Optoelectronic Semiconductor Component with Laterally Projecting Layers
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Solution Overview
Problem
Existing optoelectronic semiconductor components face challenges in achieving high light outcoupling efficiency due to material degradation and radiation absorption by the metal mirror, which affects the emission and absorption of electromagnetic radiation.
Innovation Solution
An optoelectronic semiconductor component is designed with a metal mirror surrounded by a radiation-transmissive and electrically insulating encapsulation layer, applied via atomic layer deposition, which protects the metal mirror from oxidation and migration, and ensures efficient reflection and deflection of radiation, while the carrier and semiconductor layer sequence project laterally beyond the metal mirror to enhance light outcoupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a metal mirror is used for radiation reflection, then radiation reflection efficiency is improved, but material degradation through oxidation and migration occurs
Solution Approach 1:
An encapsulation layer is introduced as an intermediary between the metal mirror and the external environment. This encapsulation layer prevents direct contact between the metal mirror and oxidizing agents, thereby maintaining both the high radiation reflection efficiency and the material stability of the metal mirror throughout its service life.
Solution Approach 2:
The patent employs a composite structure consisting of the metal mirror combined with the encapsulation layer. This composite material system leverages the high reflectivity of the metal mirror while the encapsulation layer provides protective functions, achieving both energy efficiency and long-term reliability.
2Device complexity
If the metal mirror is exposed to the environment, then device complexity is reduced, but radiation absorption increases due to material degradation
Solution Approach 1:
The encapsulation layer serves as a protective intermediary that prevents environmental degradation of the metal mirror. By blocking oxidizing agents, it prevents the formation of degraded surface layers that would absorb radiation, thus maintaining low radiation absorption without significantly increasing device complexity.
Solution Approach 2:
The encapsulation layer is implemented as a thin film structure that provides comprehensive protection against environmental factors. This thin film approach maintains the simplicity of the overall device structure while effectively preventing radiation absorption through material degradation.
3Productivity
If the carrier and semiconductor layer sequence project laterally beyond the metal mirror, then light outcoupling efficiency is improved, but the metal mirror becomes more susceptible to environmental damage
Solution Approach 1:
The encapsulation layer acts as a protective intermediary that extends over the metal mirror, shielding it from environmental damage. This allows the carrier and semiconductor layer sequence to project laterally beyond the metal mirror for improved light outcoupling efficiency, while the encapsulation layer prevents the metal mirror from being exposed to harmful environmental factors.
Solution Approach 2:
The solution moves from a two-dimensional planar protection concept to a three-dimensional encapsulation structure. The encapsulation layer wraps around the metal mirror in multiple dimensions, providing comprehensive protection while allowing lateral projection of other components for enhanced light outcoupling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases light outcoupling efficiency by preventing material degradation and radiation absorption, ensuring the semiconductor component maintains high performance throughout its service life with minimal radiation loss.
Implementation Method 1
the metal mirror is laterally surrounded by an encapsulation layer... protects the metal mirror from oxidation and migration
Implementation Method 2
ensures efficient reflection and deflection of radiation... metal mirror located between the carrier and the semiconductor layer sequence
Implementation Method 3
applying by atomic layer deposition an encapsulation layer in a lateral direction on the metal mirror
Data Source
AI summary
An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.