Optoelectronic Semiconductor Component With Metallic Reinforcement Layer
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Solution Overview
Problem
Existing optoelectronic semiconductor components face challenges in achieving improved mechanical and electro-optical properties while being easy to produce, with existing solutions not adequately addressing the need for enhanced mechanical stability and radiation efficiency.
Innovation Solution
The optoelectronic semiconductor component features a semiconductor body with a semiconductor layer sequence and a plastic carrier produced by casting, incorporating vias for electrical contacting, a metallic reinforcement layer for mechanical stability, and a converter layer for radiation efficiency, with the carrier's design allowing for surface mounting and reduced radiation absorption by contact layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a plastic carrier is used for the semiconductor body, then ease of manufacture and cost are improved, but mechanical stability deteriorates
Solution Approach 1:
The patent employs a composite structure combining a plastic carrier with a metallic reinforcement layer. The plastic carrier provides ease of manufacture and cost benefits, while the metallic reinforcement layer (comprising copper, aluminum, or aluminum alloy) enhances mechanical stability and thermal conductivity. This composite approach resolves the contradiction by integrating materials with complementary properties.
2Ease of operation
If contact layers are placed on the radiation exit area, then electrical contacting is simplified, but radiation efficiency deteriorates due to absorption
Solution Approach 1:
The patent relocates the contact layers from the radiation exit area (front surface) to the rear surface of the semiconductor body. The rear contact layers are electrically connected to the respective semiconductor regions through vertical contact holes. This dimensional relocation allows electrical contacting to be achieved without placing conductive layers in the radiation path, thereby maintaining radiation efficiency while simplifying electrical connection.
3Strength
If the carrier thickness is increased for mechanical stability, then strength is improved, but device complexity and production difficulty increase
Solution Approach 1:
Instead of uniformly increasing the entire carrier thickness, the patent applies a localized metallic reinforcement layer with thickness of 5-50 μm on specific areas of the plastic carrier where mechanical support is needed. This localized approach provides enhanced mechanical stability and thermal management while minimizing the overall increase in device complexity and production difficulty.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances mechanical stability, radiation efficiency, and ease of production, enabling improved mechanical and electro-optical performance while maintaining a radiation-free exit area and facilitating surface mounting.
Implementation Method 1
The plastic can contain one or more additives as an admixture. For example, the carrier can have SiO2 particles for adjusting the coefficient of thermal expansion.
Implementation Method 2
The optoelectronic semiconductor component has a converter layer for radiation efficiency
Data Source
Figure 1
Figure 2A~2C
Figure 2D~2F
AI summary
Disclosed is an optoelectronic semiconductor component (100), comprising a semiconductor body (1), which has a semiconductor layer sequence (2), a carrier (10), which has a plastic and a first through-contact (11) and a second through-contact (12), a p-contact layer (6) and an n-contact layer (8, 8A), at least some regions of which are arranged between the carrier (10) and the semiconductor body (1), a metal reinforcing layer (14), at least some regions of which are arranged between the n-contact layer (8, 8A) and the carrier (10), wherein the metal reinforcing layer (14) is at least 5 pm thick, and at least one p-contact hole (7) which is arranged between the first through-contact (11) and the p-contact layer (6), wherein the p-contact hole (7) is at least 5 pm thick and at least some regions of said hole are surrounded by the reinforcing layer (14). Furthermore, an advantageous method for producing such an optoelectronic semiconductor component (100) is disclosed.