Optoelectronic Semiconductor Body With Series-Connected Sublayers
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Solution Overview
Problem
Optoelectronic semiconductor bodies require improved efficiency while minimizing complexity, particularly in applications requiring high light output in small spaces, such as projection and automotive headlight systems, where existing solutions are inefficient and complex.
Innovation Solution
An optoelectronic semiconductor body with a semiconductor layer sequence featuring a trench that subdivides the active layer into electrically insulated sublayers, connected in series by connection layers, allowing for low-current voltage-driven operation and reduced leakage currents, enabling the use of high-voltage sources and monolithic integration on a common substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the active layer is subdivided into multiple electrically insulated sublayers connected in series, then current consumption is reduced and voltage threshold is increased, but device complexity increases due to additional connection layers and trenches
Solution Approach 1:
The active layer is divided into multiple active sublayers (first active sublayer, second active sublayer, etc.) that are electrically insulated from each other by trenches. Each sublayer can be independently contacted and connected in series, allowing the overall device to operate at higher voltages with lower current consumption while maintaining efficient light generation in each segment.
Solution Approach 2:
The connection layers are arranged in a three-dimensional configuration where they contact different active sublayers at different depths and connect them vertically through the semiconductor structure. This spatial arrangement enables series connection of multiple active regions without requiring a planar expansion of the device footprint.
2Ease of manufacture
If connection layers are arranged on the second main side to contact active sublayers, then manufacturing is simplified with monolithic integration, but leakage currents may increase between adjacent contact regions
Solution Approach 1:
Electrically insulating layers are introduced as intermediary materials between adjacent connection layers and within the trenches separating active sublayers. These insulating layers prevent direct electrical contact between adjacent conductive regions, thereby blocking leakage current paths while allowing the connection layers to maintain their simplifying monolithic integration advantage.
3Device complexity
If multiple active sublayers are connected in series to reduce current flow, then driver stage complexity is reduced, but the device requires higher voltage operation which may increase manufacturing difficulty
Solution Approach 1:
Multiple active sublayers are merged into a single monolithic semiconductor structure grown on a common substrate. The series connection is achieved by integrating multiple pn junctions or quantum well structures within the same crystal lattice, allowing high-voltage operation to be achieved through material composition and layer thickness control during epitaxial growth rather than through complex post-fabrication assembly.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces current flow and allows for efficient operation with lower current consumption and higher voltage thresholds, enabling the use of simpler, less expensive driver stages and improved light emission characteristics, including the generation of white light for applications like headlights.
Implementation Method 1
an active layer (200) suitable for generating electromagnetic radiation... The active layer can have a pn junction, a double heterostructure, a single quantum well (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation
Data Source
AI summary
The invention relates to an optoelectronic semi-conductor body comprising an essentially flat semi-conductor layer sequence (20) provided with a first and a second main side, comprising an active layer (22, 22') that can produce electromagnetic radiation. The semi-conductor body also comprises at least one trench that separates the active layer of the semi-conductor layer sequence for dividing the active semiconductor layer sequence into at least two electrically insulated active part layers (22, 22'). A first and a second connection layer (410, 411, 460) arranged on a second main side is used to contact the active part layers. The first and the second connection layers for contacting the at least two active part layers are connected together in an electrically conductive manner such that the active part layer form a serial connection.