Semiconductor Optoelectronic Device Transfer via Conductive Sacrificial Layer
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Solution Overview
Problem
Conventional methods for transferring semiconductor optoelectronic devices damage the growth substrate, leading to material waste and inefficiencies, as they fail to selectively and efficiently transfer the epitaxial structures to operating substrates while reusing the growth substrate.
Innovation Solution
A manufacturing method involving a sacrificial layer with electrical conductivity, where the semiconductor epitaxial stack is formed on the growth substrate, and specific units are selectively transferred to an operating substrate using a transfer structure and photoresist techniques, allowing for the reuse of the growth substrate without damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the original growth substrate is removed by dissolving with etchant or physical polishing, then the semiconductor epitaxial structure can be transferred to the operating substrate, but the growth substrate is damaged and cannot be reused
Solution Approach 1:
The patent introduces a sacrificial layer between the growth substrate and the semiconductor epitaxial structure, enabling selective separation. The sacrificial layer acts as a temporary bonding interface that can be selectively removed to release only the needed epitaxial structures while leaving the growth substrate intact for reuse.
Solution Approach 2:
The sacrificial layer serves as an intermediary element that facilitates the transfer process. It provides temporary adhesion during fabrication and enables controlled release when needed, resolving the contradiction between achieving clean transfer and preserving the growth substrate.
2Manufacturing precision
If an opaque GaAs substrate is used as the growth substrate to improve growth quality, then the lattice constant matching is improved, but the light emission efficiency is reduced during operation
Solution Approach 1:
The patent separates the growth substrate function from the support substrate function. The opaque GaAs growth substrate is used only during the growth phase, then the epitaxial structures are transferred to a transparent operating substrate for operation, allowing each substrate to optimize its specific function without compromise.
Solution Approach 2:
The high-quality epitaxial structures are grown in advance on the optimized opaque substrate, then transferred before operation. This preliminary growth action allows the device to benefit from excellent growth quality while avoiding the optical limitations of the opaque substrate during actual operation.
3Use of energy by moving object
If the semiconductor epitaxial structure is transferred to the operating substrate, then the light emission efficiency is improved, but the transfer process complexity increases
Solution Approach 1:
The sacrificial layer is disposed between the growth substrate and the semiconductor epitaxial structure in advance, before the transfer process begins. This preliminary preparation simplifies the actual transfer operation by providing a pre-established release mechanism.
Solution Approach 2:
The sacrificial layer acts as a mediator that simplifies the transfer process. By providing a dedicated release interface, it enables straightforward separation and transfer operations, reducing the complexity that would otherwise be required to achieve clean detachment and transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the selective and efficient transfer of semiconductor optoelectronic devices, reducing material waste and improving light emission efficiency by reusing the growth substrate and enhancing the adhesion and conductivity of the transferred units.
Implementation Method 1
a sacrificial layer with electrical conductivity formed on the growth substrate
Implementation Method 2
photoresist techniques, allowing for the reuse of the growth substrate without damage
Data Source
AI summary
A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.