Semiconductor Optoelectronic Structure Transformer Waveguide Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in integrating optical signals effectively due to signal depletion caused by the optical coupling effect between optical devices, particularly during the bonding process of light transformers and waveguides, which affects transmission quality and integration with existing semiconductor substrates.
Innovation Solution
A method is developed to fabricate a semiconductor optoelectronic structure by forming a waveguide on a substrate, followed by dielectric layers, a contact pad, and a passivation layer, with a patterned mask layer used for etching to create a transformer that partially overlaps the waveguide, optimizing light coupling and reducing signal depletion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If adhesive bonding is used to attach light transformer to waveguide, then assembly is simplified, but optical coupling effect deteriorates due to adhesive contraction and spreading variability
Solution Approach 1:
The patent removes the adhesive bonding step entirely from the manufacturing process. Instead of using adhesive to attach the light transformer to the waveguide, the invention uses direct mechanical integration where the light transformer is formed as an integral part of the semiconductor device structure, eliminating the harmful adhesive contraction and spreading effects.
Solution Approach 2:
The patent merges the light transformer and waveguide into a single integrated structure. The light transformer is formed within the same semiconductor substrate as the waveguide, creating a unified optoelectronic device that eliminates the need for separate bonding processes and ensures precise optical coupling through direct structural integration.
2Adaptability or versatility
If optical devices are integrated into semiconductor substrate, then system integration is improved, but manufacturing complexity increases due to process integration challenges
Solution Approach 1:
The patent employs standard semiconductor manufacturing processes (photolithography, etching, deposition, CMP) that are already widely used in the industry. By using these universal, existing processes to create both the waveguide and light transformer structures, the invention achieves optical integration without adding significant manufacturing complexity, as the same toolset and process knowledge base serves both electronic and optical functions.
3Adaptability or versatility
If light transformer is formed in advance and bonded separately, then manufacturing flexibility is maintained, but transmission quality deteriorates due to misalignment and coupling loss
Solution Approach 1:
The patent forms the light transformer structure within the semiconductor substrate before the final waveguide structures are completed. This preliminary formation allows the light transformer to be precisely positioned and integrated with the waveguide in subsequent processing steps, ensuring optimal alignment and coupling while maintaining manufacturing flexibility through sequential process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach integrates semiconductor and optical transmission device manufacturing processes, reducing chip volume and production costs while maintaining high transmission quality by minimizing signal loss and enhancing production efficiency.
Implementation Method 1
by using different materials of different refractive index between the transmission medium and the coating medium, the light transmission integrity can be retained
Implementation Method 2
an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer
Data Source
AI summary
A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.