Optoelectronic Device Tunnel Junction Doping
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Solution Overview
Problem
Current optoelectronic devices with microwires or nanowires face challenges in achieving efficient current passage through seed islands or seed layers, particularly when the thickness exceeds 2 nm, and in maintaining single-crystal structure and precise control over three-dimensional semiconductor elements during manufacturing.
Innovation Solution
A semiconductor substrate doped with a conductivity type opposite to the seed islands or seed layer is used, forming a tunnel junction, allowing for increased seed island thickness and precise control over the geometry and crystallographic properties of three-dimensional elements, with N-type doped seed islands and P-type doped substrates to enhance doping and current passage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of seed islands is increased to improve current passage, then the tunnel junction efficiency improves, but the control over three-dimensional element geometry and single-crystal structure deteriorates
Solution Approach 1:
The patent applies parameter changes by optimizing the doping concentration of the substrate to be at least 10^19 cm^-3, which enables thicker seed islands to be used while maintaining both good current passage through the tunnel junction and precise control over the geometry and single-crystal structure of the three-dimensional semiconductor elements during vapor-phase epitaxial growth
2Device complexity
If the thickness of seed islands is increased to reduce manufacturing complexity, then the device structure becomes simpler, but the current passage efficiency deteriorates
Solution Approach 1:
The patent changes the doping concentration parameter of the substrate to at least 10^19 cm^-3, which allows the seed islands to be made thicker (reducing structural complexity) while simultaneously maintaining efficient current passage through the tunnel junction formed between the heavily doped substrate and the doped three-dimensional elements
3Reliability
If heavy doping of substrate and seed islands is applied to improve current passage, then the tunnel junction conductivity improves, but the manufacturing precision of three-dimensional elements deteriorates
Solution Approach 1:
The patent applies parameter changes by setting the doping concentration at an optimal level of at least 10^19 cm^-3, which is sufficiently high to ensure good tunnel junction conductivity but controlled enough to maintain precise single-crystal structure during vapor-phase epitaxial growth of the three-dimensional semiconductor elements
Solution Approach 2:
The patent uses composite material structures with different doping levels - the substrate and seed islands are heavily doped (at least 10^19 cm^-3) to ensure good tunnel junction conductivity, while the three-dimensional semiconductor elements are grown with controlled doping to maintain single-crystal structure, creating a composite structure that optimizes both electrical and structural properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves current passage through seed islands, maintains single-crystal structure, and allows for precise control and cost-effective industrial-scale production of three-dimensional semiconductor elements.
Implementation Method 1
forming a tunnel junction, allowing for increased seed island thickness and precise control over the geometry and crystallographic properties of three-dimensional elements
Data Source
Figure 1~3
Figure 4~5D
Figure 5E~5I
AI summary
The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.