Optoelectronic Unit Marking via Non-Excited Optical Material
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Solution Overview
Problem
Existing optoelectronic units are difficult to identify effectively, and existing methods do not provide a straightforward way to recognize or differentiate between optoelectronic units with and without optically active materials, which can affect their optical properties and stability.
Innovation Solution
Incorporating an optically active material that is not excited by the primary radiation emitted by the semiconductor chip, allowing for easy identification through spectroscopic examination, and using a method that involves irradiating the unit with external radiation to detect secondary radiation for identification purposes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Difficulty of detecting and measuring
If an optically active material is incorporated into the optoelectronic unit, then identification capability is improved, but optical properties and stability may be affected
Solution Approach 1:
The optically active material is incorporated in a localized manner within the optoelectronic unit, specifically in the component arranged in the beam path of the semiconductor chip. This localized incorporation enables identification functionality without affecting the overall optical properties and stability of the optoelectronic unit, as the material is positioned only where needed for identification purposes.
2Measurement precision
If spectroscopic examination methods are used for identification, then identification accuracy is improved, but production cost and complexity increase
Solution Approach 1:
The optically active material exhibits wavelength-dependent remission or diffuse reflectivity characteristics that enable identification through spectroscopic examination. By selecting materials with specific optical signatures (e.g., particular remission profiles in the visible range), the patent enables accurate identification through relatively simple spectroscopic methods, avoiding the need for complex identification systems.
3Ease of operation
If the optically active material has high remission in the first wavelength range, then identification ease is improved, but absorption of primary radiation increases
Solution Approach 1:
The patent specifies that the optically active material shall have a wavelength-dependent remission or diffuse reflectivity R(λ) of greater than or equal to 80%, preferably greater than or equal to 90%, particularly preferably greater than or equal to 95% in the first wavelength range. This high remission parameter enables easy identification through spectroscopic examination while minimizing absorption of the primary radiation from the semiconductor chip, thus reducing energy loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optoelectronic unit can be easily recognized and identified without affecting its optical properties or stability, and the method allows for cost-effective and efficient production and detection, ensuring the optically active material does not impact the emission spectrum or brightness within normal manufacturing tolerances.
Implementation Method 1
the optically active material can be configured to absorb electromagnetic radiation, convert the wavelength or the wavelength range of the electromagnetic radiation, and emit electromagnetic radiation of the converted wavelength or wavelength range
Implementation Method 2
the optically active material is characterized in that it comprises a wavelength-dependent remission or diffuse reflectivity R(λ) of greater than or equal to 80%, preferably of greater than or equal to 90%, particularly preferably of greater than or equal to 95% in the first wavelength range
Data Source
AI summary
An optoelectronic unit includes a semiconductor chip configured to emit primary radiation with a first wavelength range during operation of the optoelectronic unit. The optoelectronic unit also includes a component including an optically active material. The component is arranged at least partially in the beam path of the semiconductor chip. The optically active material is not intended to be excited by the primary radiation with the first wavelength range. The optically active material incudes a proportion in the component of 0.004 wt %, inclusive, to 1 wt %, inclusive.