Optoelectronic Component V-Defect Charge Carrier Distribution
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Solution Overview
Problem
In semiconductor-based light emitting diodes with a multi-quantum well structure, charge carrier distribution is inhomogeneous due to barriers between quantum films, leading to reduced efficiency, especially with increasing number of quantum films and longer emission wavelengths.
Innovation Solution
Introducing V-defects in the luminous-active layer with a higher density in one lateral region than another, allowing easier charge carrier penetration and injection, resulting in a more homogeneous filling of quantum films and improved efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If charge carriers are injected into quantum films along the growth direction, then light emission is achieved, but inhomogeneous charge carrier distribution occurs due to barriers between quantum films
Solution Approach 1:
The patent introduces V-defects with different densities in different lateral regions of the semiconductor layer structure. Specifically, a first lateral region has a higher density of V-defects than a second lateral region, creating local variations in charge carrier transport properties that compensate for the barriers between quantum films and achieve more homogeneous charge carrier distribution across all quantum films.
2Temperature
If multiple quantum films are used to extend emission wavelength, then longer emission wavelengths are achieved, but efficiency decreases due to increased inhomogeneity in charge carrier filling
Solution Approach 1:
By creating lateral regions with different V-defect densities, the patent locally modifies charge carrier transport pathways. The first lateral region with higher V-defect density facilitates charge carrier injection into quantum films that would otherwise be poorly filled, particularly in multi-quantum well structures designed for longer emission wavelengths, thereby maintaining efficiency across all quantum films.
Solution Approach 2:
V-defects act as intermediary structures that mediate charge carrier transport between the contact layers and the quantum films. These V-defects provide preferential pathways for charge carriers to overcome the barriers between quantum films, enabling more uniform charge carrier distribution across multiple quantum films without requiring changes to the quantum films themselves.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased permeability through V-defects facilitates a more uniform filling of quantum films, enhancing the overall efficiency of the optoelectronic component by ensuring better charge carrier injection and distribution.
Implementation Method 1
charge carriers can then penetrate through the luminous-active layer more easily in the first lateral region than in the second lateral region. In this case, the charge carriers move through the V-defects.
Data Source
AI summary
The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.