Optothermal Nanolithography for 2D Material Patterning

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Solution Overview

Problem

Current methods for patterning two-dimensional atomic layer materials are complex, costly, and struggle with high-power requirements and resolution in fabricating sub-micron patterns, limiting their application in nanoelectronics and nanophotonics.

Innovation Solution

The development of opto-thermoplasmonic nanolithography (OTNL) uses a thermoplasmonic substrate with gold nanoparticles to achieve low-power, high-resolution patterning through thermal oxidation and sublimation at localized hot spots, enabling maskless, versatile, and programmable patterning of 2D materials with a continuous-wave laser.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional lithography methods are used for patterning 2D materials, then patterning capability is achieved, but the process complexity and cost increase significantly

Engineering Contradiction:
Improvepatterning process simplicityVSAvoidpatterning system complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent extracts the patterning function from complex multi-step lithography systems and implements it through a single-step optothermal ablation process using laser irradiation on 2D materials, eliminating the need for photoresist coating, exposure, and development steps

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent replaces mechanical and chemical lithography processes with optical field-based optothermal ablation, using laser-induced thermal effects to directly pattern 2D materials without mechanical contact or chemical processing

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Productivity

If high-power lasers are used for patterning 2D materials, then ablation efficiency improves, but damage to surrounding areas and material quality deteriorate

Engineering Contradiction:
Improveablation efficiencyVSAvoidpatterning resolution
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by concentrating laser energy precisely at the target location on 2D materials through optical focusing, creating localized ablation zones with high temperature gradients that confine the ablation effect to the intended pattern area while preserving surrounding material quality

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the parameter of laser power density to achieve optimal patterning results, using controlled laser irradiation parameters to enable efficient ablation while maintaining material integrity through precise parameter optimization

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If multi-step patterning processes are used, then pattern quality is maintained, but production throughput decreases

Engineering Contradiction:
Improvepattern qualityVSAvoidpatterning throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent merges multiple separate patterning steps (photoresist application, exposure, development, etching) into a single optothermal ablation step that achieves both high pattern quality and high throughput by directly removing material through controlled laser-induced heating

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent performs preliminary action by directly creating the final pattern through optothermal ablation without requiring intermediate processing steps, achieving both high precision and high efficiency in a single operation

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

OTNL demonstrates low-power (5 mW/μm²) and high-resolution patterning of graphene and MoS2 monolayers, allowing for complex and large-scale nanostructures with high throughput, reducing the need for expensive equipment and multi-step processes.

Implementation Method 1

the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy

Methodology Applied
Scientific EffectPhotothermal conversion: Absorption (EM radiation)

Implementation Method 2

generating an ablation region at a location of the two-dimensional atomic layer material proximate to the first location of the optothermal substrate, wherein at least a portion of the ablation region has a temperature sufficient to ablate at least a portion of the two-dimensional atomic layer material

Methodology Applied
Scientific EffectThermal ablation: Ablation

Data Source

PatentUS11448965B2Optical patterning systems and methods
Publication Date: 2022.09.20 BOARD OF RGT THE UNIV OF TEXAS SYST
  • US11448965B2 patent drawing
  • US11448965B2 patent drawing
  • US11448965B2 patent drawing

AI summary

Disclosed herein are methods for patterning two-dimensional atomic layer materials, the methods comprising: illuminating a first location of an optothermal substrate with electromagnetic radiation, wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy, and wherein the optothermal substrate is in thermal contact with a two-dimensional atomic layer material; thereby: generating an ablation region at a location of the two-dimensional atomic layer material proximate to the first location of the optothermal substrate, wherein at least a portion of the ablation region has a temperature sufficient to ablate at least a portion of the two-dimensional atomic layer material within the ablation region, thereby patterning the two-dimensional atomic layer material. Also disclosed herein are systems for performing the methods described herein, patterned two-dimensional atomic layer materials made by the methods described herein and methods of use thereof.