Organic Acid Particle Removal in Semiconductor CMP
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Solution Overview
Problem
Semiconductor devices often suffer from defects due to unwanted particles trapped during the polishing process, which can cause electrical bridging and reduce manufacturing yield and device quality.
Innovation Solution
A method involving chemical mechanical polishing followed by the application of organic acids with specific pH values and concentrations to generate electrostatic repulsion, effectively removing particles between metal and dielectric layers without using contact pads, ensuring satisfactory semiconductor device quality and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a polishing process (CMP) is performed to form the metal gate electrode, then the metal gate electrode is formed, but unwanted particles are trapped on the semiconductor device
Solution Approach 1:
An organic acid solution is introduced as an intermediary substance between the polishing process and the final device structure. The organic acid acts as a mediator that selectively removes particles from the metal gate electrode and dielectric layer surfaces through chemical interaction, without requiring contact pads or additional mechanical processing steps
Solution Approach 2:
The patent utilizes changes in chemical parameters (pH value, organic acid concentration) to control the particle removal process. By adjusting these parameters, the organic acid solution achieves optimal conditions for removing particles while preserving the underlying semiconductor structures
2Stability of the object's composition
If particles remain on the semiconductor device, then the device structure is maintained, but electrical bridging defects occur
Solution Approach 1:
The organic acid solution serves as a non-contact intermediary that chemically interacts with and removes particles causing electrical bridging. This approach maintains structural integrity while eliminating reliability-defecting particles through selective chemical removal
Solution Approach 2:
The patent replaces mechanical particle removal methods (such as contact pad-based cleaning) with a chemical mechanism. The organic acid solution enables particle removal through chemical interaction rather than mechanical force, thereby preventing structural damage while improving electrical insulation reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method substantially removes unwanted particles, preventing electrical bridging and ensuring desirable electrical insulation between metal gate electrodes, thereby enhancing semiconductor device quality and manufacturing yield.
Implementation Method 1
using the first organic acid to cause at least one of first electrostatic repulsion between the particle and the dielectric layer, second electrostatic repulsion between the particle and the first metal member, and third electrostatic repulsion between the particle and the second metal member
Data Source
AI summary
A method used for processing a structure in manufacturing of a semiconductor device may include polishing the structure to form a polished structure. The polished structure may include a metal member, a dielectric layer that contacts the metal member, and a particle that contacts at least one of the metal member and the dielectric layer. The method may further include applying an organic acid to the polished structure to remove at least a portion of the particle. The particle may be substantially removed, such that satisfactory quality of the semiconductor may be provided.