Organic Barrier Layer for Copper Bump Short Circuit Prevention
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Solution Overview
Problem
In micro-scaled electronic connection devices with copper components, a short phenomenon occurs due to the dissociation of copper ions, leading to failure in products.
Innovation Solution
A semiconductor structure is developed with a carrier, under bump metallurgy layers, copper containing bumps, and an organic barrier layer, where the organic barrier layer covers the top and ring surfaces of the copper bumps, preventing copper ion dissociation and subsequent short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper components are used in micro-scaled electronic connection devices, then electrical conductivity and connection performance are improved, but copper ion dissociation causes short circuits between adjacent bumps
Solution Approach 1:
An organic barrier layer is introduced as an intermediary substance between adjacent copper-containing bumps. This barrier layer prevents direct interaction between copper ions, blocking the dissociation process while maintaining electrical connection functionality. The organic material acts as a mediator that allows controlled ion transport while preventing harmful short circuits.
Solution Approach 2:
The connection structure uses a composite material system consisting of copper-containing bumps combined with an organic barrier layer. This composite approach leverages the high conductivity of copper while the organic component provides protective functionality, creating a multi-functional material system that addresses both electrical performance and reliability concerns.
2Volume of moving object
If micro-scaled bumps or pins are used for electronic connections, then device size is reduced and integration density is improved, but copper ion dissociation more easily causes short circuits
Solution Approach 1:
The organic barrier layer is applied locally and selectively between adjacent copper bumps rather than uniformly across the entire device. This localized protection strategy targets specific areas where short circuit risks are highest, providing enhanced reliability at critical interfaces while maintaining the miniaturized device architecture.
Solution Approach 2:
In the micro-scaled configuration, the organic barrier layer serves as a critical intermediary that prevents copper ion migration across reduced distances between adjacent bumps. The barrier mediates the interaction between closely-spaced conductive elements, enabling high integration density without sacrificing reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The organic barrier layer effectively prevents short circuits between adjacent copper bumps, enhancing the reliability and longevity of micro-scaled electronic connection devices.
Implementation Method 1
a short phenomenon occurred between two adjacent copper containing bumps via dissociation of copper ions can be prevented effectively
Data Source
AI summary
A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.