Organic Diode Short Protection Layer for Cathode Shorts

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Solution Overview

Problem

Electro-optically active organic diodes with highly doped charge carrier layers face reliability issues due to shorts between cathode and anode electrodes, primarily caused by high field strengths at physical defects in the cathode, leading to organic material degradation and increased risk of shorts.

Innovation Solution

Incorporating a short protection layer of inorganic semiconductor material between the cathode and charge carrier organic layer, which reduces direct contact and mitigates the impact of high field strengths, while also acting as a conductive layer to distribute pressure and heat, and potentially serving as an exciton blocking and electron injection layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If highly doped organic semiconductor material is used as charge carrier layer, then charge carrier density and mobility are improved, but reliability deteriorates due to shorts between electrodes

Engineering Contradiction:
Improvecharge carrier mobilityVSAvoiddevice reliability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

An inorganic semiconductor layer is introduced as an intermediary between the cathode electrode and the highly doped organic charge carrier layer. This intermediate layer acts as a buffer that prevents direct contact, thereby blocking the formation of shorts while still allowing charge carrier transport. The inorganic layer mediates the interaction between the electrode and organic material, solving the reliability problem without sacrificing the high mobility benefits of the doped organic layer.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If high field strengths occur at cathode defects, then charge injection is enhanced, but organic material degradation is accelerated

Engineering Contradiction:
Improvecharge injection efficiencyVSAvoidorganic material stability
Core Design Contradiction:
PowerVSStability of the object's composition

Solution Approach 1:

The inorganic semiconductor layer is placed beforehand between the cathode and organic material to cushion against the harmful effects of high field strengths at defects. This protective layer absorbs and distributes the electrical stress, preventing direct damage to the organic material while still allowing effective charge injection to occur through the inorganic layer.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Ease of manufacture

If cathode material softens and melts due to raised temperatures, then electrode formation is simplified, but short between electrodes occurs

Engineering Contradiction:
Improveelectrode fabricationVSAvoidshort prevention
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The inorganic semiconductor layer serves as a thermal and electrical buffer between the cathode and organic layers. Even when the cathode material softens or melts during fabrication, the inorganic layer maintains structural integrity and prevents direct contact with the organic layers, thereby preventing shorts while allowing flexible electrode fabrication processes.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The inorganic short protection layer enhances the reliability of organic diodes by preventing shorts, maintaining structural integrity under high temperatures, and reducing the risk of organic material damage, thereby improving the operational stability and efficiency of the devices.

Implementation Method 1

potentially serving as an exciton blocking and electron injection layer

Methodology Applied
Scientific EffectExciton blocking:

Implementation Method 2

potentially serving as an exciton blocking and electron injection layer

Methodology Applied
Scientific EffectElectron injection:

Data Source

PatentUS8692460B2Highly doped electro-optically active organic diode with short protection layer
Publication Date: 2014.04.08 BEIJING XIAOMI MOBILE SOFTWARE CO LTD
  • US8692460B2 patent drawing
  • US8692460B2 patent drawing
  • US8692460B2 patent drawing

AI summary

An electro-optically active organic diode has anode and cathode electrodes, an electro-optically active organic layer between the electrodes, and a charge carrier organic layer between the electro-optically active organic layer and the cathode electrode layer. The charge carrier organic layer is formed of a highly doped organic semiconductor material. A short protection layer is arranged between the cathode electrode layer and the charge carrier organic layer. The short protection layer is formed of an inorganic semiconductor material.