Organic EL Display Gate Electrode Patterning

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Solution Overview

Problem

Conventional methods for manufacturing organic electroluminescence display devices require a large number of masks, leading to prolonged and complex manufacturing processes and higher costs.

Innovation Solution

The method involves patterning a semiconductor thin film using fewer masks by forming a thin film transistor with a gate electrode and source/drain electrodes on the same layer, and an organic layer with a light emitting layer between them, allowing for simultaneous patterning of the gate electrode and an electrode of the organic electroluminescence device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional manufacturing methods are used with multiple masks, then manufacturing precision can be maintained, but the manufacturing process becomes prolonged and complex with higher costs

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidmanufacturing process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent merges the patterning of the gate electrode and the first electrode layer into a single photolithography step. Both structures are patterned simultaneously using the same mask and photoresist layer, eliminating the need for separate patterning steps and reducing the total number of masks required in the manufacturing process.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The photolithography process is designed to serve multiple functions simultaneously: it patterns both the gate electrode of the thin film transistor and the first electrode layer of the organic electroluminescence device. This multi-functional approach reduces process steps and manufacturing complexity while maintaining the required precision for both structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Ease of manufacture

If the gate electrode and first electrode layer are patterned separately, then manufacturing precision is maintained, but the number of masks and process steps increases

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidpattern alignment precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent combines the patterning operations for the gate electrode and first electrode layer into a single photolithography step. By applying the photoresist layer once and using a single development step, both structures are patterned simultaneously, simplifying the manufacturing process while ensuring consistent pattern quality through unified process control.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the number of masks needed, simplifies the manufacturing process, and enhances luminous efficiency by reflecting light from adjacent electrodes, thereby improving the display device's brightness and reducing power consumption.

Implementation Method 1

The electrons and the holes recombine in the light emitting layer to create excitons, and when the excitons transition from an excited to a ground state, fluorescent molecules of the light emitting layer emit light

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

enhances luminous efficiency by reflecting light from adjacent electrodes, thereby improving the display device's brightness

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS7626330B2Organic electroluminescence display device
Publication Date: 2009.12.01 SAMSUNG DISPLAY CO LTD
  • US7626330B2 patent drawing
  • US7626330B2 patent drawing
  • US7626330B2 patent drawing

AI summary

An organic electroluminescence display device including a thin film transistor, a first electrode layer, a second electrode layer, and an organic layer. The thin film transistor includes a semiconductor layer, a gate electrode disposed over the semiconductor layer, and source and drain electrodes insulated from the gate electrode. The first electrode layer is coupled to either the source electrode or the drain electrode, and the first electrode layer and the gate electrode are disposed on the same layer. The second electrode layer is disposed above the first electrode layer, and an organic layer, which includes at least a light emitting layer, is interposed between the first electrode layer and the second electrode layer.