Organic Film Composition for High Etching Resistance and Planarization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current resist compositions for semiconductor manufacturing face challenges in achieving high dry etching resistance and advanced filling/planarizing characteristics, particularly as pattern sizes become finer, leading to issues with pattern transfer and substrate processing.
Innovation Solution
A compound with specific partial structures, such as those represented by formulas (i) and (iii), is used to form an organic film composition that includes fluorene and phenol/naphthol structures, providing high carbon density and flexibility, which enhances dry etching resistance and filling/planarizing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the thickness of photoresist film is reduced to achieve finer patterns, then pattern resolution is improved, but pattern transfer reliability deteriorates due to high aspect ratio and pattern fall
Solution Approach 1:
The patent divides the single photoresist film into two separate layers: a lower photoresist film directly on the substrate and an upper photoresist film formed thereon. This segmentation allows each layer to have optimized thickness and properties, with the lower layer providing mechanical support and the upper layer enabling fine pattern formation, thereby resolving the contradiction between fine pattern resolution and pattern transfer reliability.
2Use of energy by moving object
If photoresist composition uses resins with low absorbance for shorter wavelength exposure (novolac, polyhydroxystyrene, aliphatic polycyclic resins), then exposure performance is improved, but dry etching resistance deteriorates
Solution Approach 1:
The patent applies different resin compositions to different layers: the lower photoresist film uses resins with high dry etching resistance (novolac, polyhydroxystyrene, or aliphatic polycyclic resins), while the upper photoresist film uses resins with low absorbance for exposure (aromatic polycyclic resins). This local differentiation allows each layer to optimize its specific function, resolving the contradiction between exposure performance and dry etching resistance.
3Strength
If organic film composition focuses on high carbon density for dry etching resistance, then etching resistance is improved, but filling and planarizing characteristics deteriorate
Solution Approach 1:
The patent assigns different compositional priorities to different layers: the lower photoresist film is designed with high carbon density and high dry etching resistance to provide a stable foundation, while the upper photoresist film is optimized for filling and planarizing characteristics to enable smooth pattern formation. This local quality differentiation resolves the contradiction between etching resistance and filling/planarizing characteristics.
Data Source
AI summary
The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii),wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.