Organic Film Composition for Semiconductor Etching
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Solution Overview
Problem
Current organic film compositions for semiconductor manufacturing lack both high dry etching resistance and excellent filling-up and flattening characteristics, which are essential for precise pattern transfer and substrate flattening in microprocessing.
Innovation Solution
An organic film composition comprising a heat-decomposable polymer, an organic solvent, and an aromatic ring-containing resin, where the heat-decomposable polymer has a weight reduction rate of 40% or more from 30°C to 250°C, enhancing filling-up and flattening characteristics while maintaining etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the photoresist film thickness is reduced to achieve finer pattern resolution, then the pattern resolution is improved, but the dry etching resistance is decreased
Solution Approach 1:
The patent divides the resist system into multiple functional layers: a photoresist layer for pattern formation and an organic film layer for etching protection. This segmentation allows each layer to optimize its specific function - the photoresist provides high resolution while the organic film provides dry etching resistance, resolving the contradiction between thin film resolution and etching resistance
Solution Approach 2:
The patent uses a composite structure combining photoresist material and organic film material with different functional properties. The organic film contains aromatic ring-containing resins and heat-decomposable polymers that provide etching resistance, while the photoresist layer provides pattern definition. This composite approach enables simultaneous achievement of high resolution and high etching resistance
2Length of moving object
If the photoresist film thickness is reduced for finer patterns, then the pattern width is decreased, but the aspect ratio increases causing pattern fall
Solution Approach 1:
By separating the pattern formation function (photoresist) from the structural support function (organic film), the patent enables use of thinner photoresist films for high-resolution patterning without compromising pattern integrity. The organic film layer provides mechanical support that prevents pattern fall even when photoresist thickness is reduced
Solution Approach 2:
The organic film is formed on the substrate before photoresist coating, establishing a protective and supportive base layer in advance. This preliminary action ensures that when thin photoresist patterns are formed, they have adequate support to maintain their structure throughout the etching process
3Strength
If a multilayer resist structure is introduced to improve etching resistance, then the etching resistance is improved, but the process complexity increases
Solution Approach 1:
The patent extracts the etching resistance function from the photoresist material itself and places it in a separate organic film layer. This allows the photoresist to focus solely on pattern formation using simple, well-established photoresist chemistry, while the organic film handles etching protection, thereby simplifying the overall material selection and processing
4Manufacturing precision
If the photoresist film is made thinner for high-resolution patterning, then the resolution is improved, but the material and process security deteriorates
Solution Approach 1:
The patent creates a composite resist system where the organic film layer provides enhanced material security through its specific composition (aromatic ring-containing resins and heat-decomposable polymers), while the photoresist layer maintains high resolution. The combination delivers both high-resolution patterning and reliable material performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high etching resistance and excellent filling-up and flattening characteristics, enabling precise pattern transfer and substrate flattening, and can be used as a resist underlayer film or flattening composition in semiconductor manufacturing.
Implementation Method 1
a heat-decomposable polymer, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass
Data Source
AI summary
The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.