Organic Film Composition for Semiconductor Planarization
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Solution Overview
Problem
As semiconductor manufacturing advances towards high integration and high processing speed, the miniaturization of pattern sizes leads to reduced photoresist film thickness, lowering resolution performance and increasing the aspect ratio of patterns, resulting in pattern collapse and inadequate etching selectivity between photoresist films and substrates, necessitating a composition with high filling and planarizing properties for precise pattern transfer.
Innovation Solution
A compound with a minimum complex viscosity of 10 Pa*s or less, measured within 50° C. to 300° C., is used to form an organic film composition that provides high filling and planarizing properties, along with a specific molecular weight and thermal flowability, enabling the formation of a flat organic film on substrates with steps or complex structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the photoresist film thickness is reduced to accommodate finer pattern sizes, then the pattern resolution is improved, but the etching resistance and structural stability are worsened
Solution Approach 1:
The patent divides the resist system into multiple functional layers: a lower resist layer (50-200 nm) providing etching resistance and an upper resist layer (100-500 nm) providing pattern definition. This segmentation allows each layer to be optimized independently - the lower layer uses materials with high etching resistance while the upper layer uses materials with high resolution, resolving the contradiction between thin film requirements and etching resistance needs
Solution Approach 2:
The patent employs composite material structures including organic-inorganic hybrid lower resist layers combining organic polymers with inorganic nanoparticles (silica, titania, zirconia) to simultaneously achieve high etching resistance and adequate pattern fidelity. The composite structure leverages the hardness and chemical inertness of inorganic particles for etching resistance while maintaining the processability of organic matrices
2Length of moving object
If the photoresist film thickness is reduced for finer patterns, then the pattern size is improved, but the aspect ratio increases causing pattern collapse
Solution Approach 1:
By segmenting the resist into multiple thin layers rather than using a single thick layer, the patent reduces the aspect ratio of individual pattern structures. Each layer has smaller height, so when patterns are formed, the walls are less prone to collapse. The multi-layer structure distributes the structural load across multiple interfaces with underlying layers providing mechanical support
Solution Approach 2:
The patent transitions from a single-layer two-dimensional pattern definition to a multi-layer three-dimensional structure where the vertical dimension is used to provide mechanical support. The lower resist layer acts as a structural foundation that prevents the upper layer patterns from collapsing, effectively using the third dimension to solve the aspect ratio problem
3Productivity
If the photoresist film is made thinner for miniaturization, then the pattern density is improved, but the etching selectivity between resist and substrate is worsened
Solution Approach 1:
The patent segments the resist system into lower and upper layers with different material compositions optimized for different functions. The lower layer uses materials specifically selected for high etching selectivity against the substrate, while the upper layer uses materials optimized for pattern definition. This functional segmentation allows the lower layer to provide sufficient etching protection even when the total resist thickness is reduced
Solution Approach 2:
The lower resist layer employs composite materials with high carbon density and etching resistance, such as organic-inorganic hybrids containing silica, titania, or zirconia nanoparticles dispersed in polymer matrices. These composite materials provide enhanced etching selectivity that compensates for the reduced overall resist thickness, maintaining reliable pattern transfer to the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The organic film composition effectively fills fine structures and planarizes substrates, improving etching resistance and precision in pattern transfer, suitable for multilayer resist processes and semiconductor manufacturing, while maintaining thermal flowability and adhesiveness to various substrates.
Implementation Method 1
A compound with a minimum complex viscosity of 10 Pa*s or less, measured within 50° C. to 300° C., is used to form an organic film composition that provides high filling and planarizing properties
Implementation Method 2
A compound with a minimum complex viscosity of 10 Pa*s or less, measured within 50° C. to 300° C., is used to form an organic film composition
Data Source
AI summary
The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa·s or less when the complex viscosity is measured within a range of 50° C. to 300° C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.