Organic Film Material for Gap Filling and Planarizing Lithography
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Solution Overview
Problem
Existing photoresist compositions face challenges with reduced resolution and pattern collapse due to miniaturization, lack of etching selectivity, and insufficient dry etching resistance, necessitating a material with improved filling, planarizing, and adhesive properties for precise pattern transfer in semiconductor manufacturing.
Innovation Solution
A compound-based organic film material with bisphenol derivatives and flexible chains is used, combined with an organic solvent, to form a film with high filling, planarizing, and adhesive properties, suitable for multilayer resist processes, enhancing etching resistance and pattern transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the photoresist film thickness is reduced to achieve pattern miniaturization, then the pattern resolution is improved, but the aspect ratio becomes too large causing pattern collapse
Solution Approach 1:
The patent employs a multilayer resist system comprising a first resist film (novolak-based) and a second resist film (polyhydroxystyrene-based) with different etching selectivities. This composite structure allows the first film to provide mechanical support preventing collapse while the second film enables high-resolution patterning, resolving the contradiction between thin film requirements and pattern stability.
Solution Approach 2:
The resist system is segmented into multiple functional layers: a novolak resin base component providing etching resistance and structural support, and a polyhydroxystyrene component providing high-resolution patterning capability. This segmentation allows each layer to optimize for its specific function, preventing pattern collapse while achieving miniaturization.
2Illumination intensity
If novolak resin is used for photoresist composition to reduce light absorption at shortened wavelength, then the exposure light absorption is reduced, but the etching rate accelerates reducing etching resistance
Solution Approach 1:
The patent assigns different material properties to different functional components: novolak resin provides high etching resistance and structural integrity, while polyhydroxystyrene provides low light absorption and high-resolution patterning. Each material's local quality is optimized for its specific role, resolving the contradiction between light absorption and etching resistance.
Solution Approach 2:
By combining novolak resin (high etching resistance) with polyhydroxystyrene (low light absorption), the composite resist system achieves both required properties simultaneously, with each component contributing its advantageous characteristic to the overall system performance.
3Manufacturing precision
If polyhydroxystyrene is used for photoresist composition to achieve high resolution, then the light absorption is reduced, but the dry etching resistance becomes insufficient
Solution Approach 1:
The novolak resin acts as an intermediary layer providing etching resistance and structural support for the polyhydroxystyrene patterning layer. This intermediary structure allows the polyhydroxystyrene to achieve high-resolution patterning while the novolak resin protects against etching damage, resolving the contradiction between resolution and etching resistance.
Data Source
Figure 1(A)~1(F)
Figure 2(G)~3(J)
Figure 4
AI summary
The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent. In the formula (1), X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 2 to 10, R1 represents at least one or more of the following formulae (2) to (4), where 11 represents 0 or 1, and 12 represents 0 or 1. Thus, provided is an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate. X(̵R1)n1 (1)