Organic Underlayer Film Material for Inert-Gas Curing and Planarization
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Solution Overview
Problem
Current semiconductor device manufacturing processes face challenges in achieving high integration and high processing speed due to limitations in miniaturization, substrate corrosion during high-temperature planarization, and insufficient heat resistance and adhesiveness of organic films used in multilayer resist methods.
Innovation Solution
A material comprising a compound with a specific molecular structure, capable of forming an organic film that is cured under both air and inert gas conditions, providing high heat resistance, excellent adhesiveness, and superior filling and planarizing properties, along with a suitable solvent system and optional additives for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an organic film is formed using conventional organic resin-containing composition, then the film can be used in multilayer resist methods, but the film exhibits insufficient heat resistance and adhesiveness to the substrate
Solution Approach 1:
The patent changes the chemical parameters of the organic film material by introducing a specific compound structure with formula (1) containing a tetravalent or hexavalent organic group W1 and multiple aromatic rings with hydroxyl groups. This structural parameter change enables the film to achieve high heat resistance and adhesiveness without requiring complex manufacturing processes or additional treatment steps.
Solution Approach 2:
The patent creates a composite material system by combining the specific compound of formula (1) with conventional organic solvents and optional additives such as crosslinking agents and plasticizers. This composite approach allows the organic film to exhibit both high heat resistance and adhesiveness while maintaining ease of manufacture through standard spin-coating and baking processes.
2Reliability
If high-temperature baking is performed in air to form the organic film, then the film achieves sufficient curing, but the substrate becomes corroded
Solution Approach 1:
The patent enables the organic film to be successfully cured in an inert gas atmosphere (nitrogen, argon, or carbon dioxide) instead of requiring air or oxygen. The compound of formula (1) undergoes sufficient curing and crosslinking in these inert environments, preventing substrate corrosion while achieving the necessary film density and adhesion properties.
Solution Approach 2:
The patent introduces an intermediary mechanism where the specific molecular structure of compound (1) with its multiple hydroxyl groups and aromatic rings enables alternative curing pathways that do not require atmospheric oxygen. This allows the curing process to proceed via intramolecular or intermolecular reactions that are independent of the surrounding atmosphere composition.
3Strength
If the resist upper layer film thickness is increased to ensure sufficient dry-etching resistance, then the film can process the substrate, but pattern collapse occurs and pattern profile deteriorates
Solution Approach 1:
The patent introduces an intermediary organic film layer with exceptional mechanical properties derived from compound (1)'s molecular structure. This intermediary layer provides the necessary dry-etching resistance and structural support, allowing the resist upper layer film to maintain thin dimensions (50-500 nm) while still enabling successful substrate processing without pattern collapse.
Solution Approach 2:
The patent applies local quality by creating a specialized organic film layer with tailored properties (high etching resistance, planarization capability, and mechanical strength) at the interface between the substrate and the resist stack. This localized functional layer allows the upper resist layer to be thin and high-resolution while the underlying organic film provides the necessary structural support.
4Manufacturing precision
If conventional organic film materials are used to fill fine patterns and planarize surfaces, then the film can be formed, but the film exhibits insufficient filling and planarizing properties
Solution Approach 1:
The patent changes the physical and chemical parameters of the organic film material through the specific molecular structure of compound (1), which includes a tetravalent or hexavalent organic group W1 and multiple aromatic rings with hydroxyl groups. These parameter changes enable the film to exhibit superior filling and planarizing properties, reducing surface roughness and achieving complete pattern filling without requiring complex processing conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material enables the formation of organic films with high heat resistance, excellent adhesiveness, and improved filling and planarizing capabilities, reducing substrate corrosion and increasing semiconductor device manufacturing yields.
Implementation Method 1
the compound is cured under film formation conditions not only in air but also inert gas
Implementation Method 2
heating the substrate to be processed coated with the material for forming an organic film under an inert gas atmosphere at a temperature of 50°C or higher to 600°C or lower
Implementation Method 3
capable of filling a fine pattern including hole, trench, and fin formed on a substrate to be processed with a film without void
Implementation Method 4
capable of filling a step- or pattern-dense region and a pattern-free region with a film to planarize the regions
Implementation Method 5
excellent adhesiveness to a substrate
Implementation Method 6
high heat resistance
Data Source
Figure 1~2(F)
Figure 3G~3I
Figure 4J~4K
AI summary
The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (IA); and (B) an organic solvent, where W1 represents a tetravalent or hexavalent organic group, n1 represents an integer of 1 or 2, n2 represents 2 or 3, each R1 independently represents any in the following formula (IB), and a hydrogen atom of a benzene ring in the formula (1A) is optionally substituted with a fluorine atom. This provides: a compound having a dioxin structure, which is cured even under film formation conditions in inert gas, and which is capable of forming an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formability and adhesiveness to a substrate; and an organic film material containing the compound.