Organic Film Material for Semiconductor Planarization and CVD Resistance
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in forming organic films with high planarizing and filling properties, especially on substrates with wide trench structures, and in withstanding high-temperature heating for CVD methods, leading to issues with pattern transfer and film thickness fluctuations.
Innovation Solution
A material comprising a compound with a hydrocarbon group, diaryl ether or diaryl amine structure, and an electron-attracting group bonded to a benzene ring with a triple bond, combined with an organic solvent and optional additives like acid generators, surfactants, crosslinking agents, and plasticizers, which forms an organic film with enhanced heat resistance, filling, and planarizing properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If photoresist film thickness is reduced to enhance resolution for fine patterning, then resolution performance is improved, but dry etching resistance is lowered and film damage occurs
Solution Approach 1:
The patent divides the single photoresist film into multiple layers: an organic underlayer film with high dry etching resistance and an upper photoresist film for pattern formation. This segmentation allows each layer to specialize in one function, resolving the contradiction between resolution and etching resistance.
Solution Approach 2:
The patent uses composite material structure combining organic resin (for etching resistance) and photoreactive resin (for pattern formation) in a multilayer configuration. The organic underlayer film provides chlorine- and fluorine-based gas plasma resistance, while the upper film enables precise patterning.
2Ease of manufacture
If photoresist film is used as etching mask for substrate processing, then pattern transfer is enabled, but photoresist film damage and collapse occur due to insufficient etching selectivity
Solution Approach 1:
The patent segments the etching mask function into two parts: the organic underlayer film that provides etching selectivity and protects the substrate, and the upper photoresist film that provides the pattern definition. This prevents photoresist collapse during substrate processing.
Solution Approach 2:
The organic underlayer film acts as an intermediary between the substrate and the upper photoresist film, providing the necessary etching selectivity and mechanical support during the etching process, thereby preventing direct damage to the photoresist pattern.
3Measurement precision
If resin with low absorbance at exposure wavelength is used to enhance resolution, then resolution is improved, but etching rate increases under dry etching conditions reducing etching resistance
Solution Approach 1:
The patent separates the functions of low absorbance resin (in the upper photoresist film for resolution) from high etching resistance material (organic resin in the underlayer film). This allows each material to be optimized for its specific function without compromise.
Solution Approach 2:
The patent employs composite materials where the upper film uses resins optimized for lithographic resolution (low absorbance) while the underlayer uses organic resins optimized for dry etching resistance, combining the benefits of both material types.
4Manufacturing precision
If multilayer resist method is used to improve pattern transfer precision, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The patent segments the resist system into two functional layers with distinct roles, which simplifies the optimization of each layer independently while achieving overall high precision pattern transfer through the coordinated function of both layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material enables the formation of organic films with high heat resistance and excellent planarizing and filling properties, preventing film thickness fluctuations and ensuring precise pattern transfer, even on substrates with complex structures, and can withstand high-temperature CVD processes.
Implementation Method 1
the compound for forming an organic film has thermal flowability, it is possible to impart high filling and planarizing properties to an organic film
Implementation Method 2
heating the substrate to be processed coated with the material for forming an organic film under an inert gas atmosphere at a temperature of 50°C or higher and 600°C or lower for 10 seconds to 7200 seconds to obtain a cured film
Data Source
Figure 1~2(F)
Figure 3~4
AI summary
The present invention is a material for forming an organic film, the material containing (A) a compound for forming an organic film shown by the following general formula (1A), and (B) an organic solvent. This provides a material for forming an organic film which is not only capable of forming an organic film excellent in planarizing property and film formability even on a substrate to be processed having a portion that makes particularly planarization difficult, such as wide trench structure (wide trench), in a fine patterning process by a multilayer resist method in a semiconductor-device manufacturing process, and which is also capable of withstanding high-temperature heating in forming an inorganic hard mask middle layer film by a CVD method.