Organic Film Composition for Planarized Etch-Resistant Patterning
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Solution Overview
Problem
Existing organic film materials for semiconductor manufacturing face challenges in providing high etching resistance, twisting resistance, and planarization while maintaining carbon content, and are prone to sublimate components and film formability issues.
Innovation Solution
A composition comprising a sumanene derivative compound represented by a specific general formula, combined with an organic solvent, forms an organic film with high carbon content, thermal curability, and reduced sublimate components, enhancing etching and twisting resistance, and planarization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a CVD-C film is used as a carbon hard mask to reduce hydrogen atoms and improve etching resistance, then etching resistance is improved, but it becomes difficult to flatly embed stepped substrates due to CVD process characteristics
Solution Approach 1:
The invention changes the material parameters by using a spin-coating process instead of CVD, and by employing a specific organic compound composition (sumanene derivative with carbon content ≥85 wt%) that enables both planarization and high etching resistance. This parameter change allows the organic film to be deposited conformally on stepped substrates while maintaining the required etching resistance.
Solution Approach 2:
The invention replaces the CVD mechanical deposition system with a spin-coating system using organic solvent-based solution. This substitution enables the film to be applied conformally on stepped substrates through the fluidity and planarization properties of the spin-coating process, while the organic compound composition provides the necessary etching resistance.
2Ease of manufacture
If an organic film is formed by spin-coating to flatly embed stepped substrates, then embedding ability is improved, but etching resistance deteriorates compared to CVD-C film
Solution Approach 1:
The invention changes the chemical composition parameters by using a sumanene derivative compound with carbon content ≥85 wt% and specific molecular structure (formulas (1)-(3)). This compositional parameter change enables the organic film to achieve high etching resistance comparable to or exceeding CVD-C film, while maintaining the spin-coating process advantages for planarization.
Solution Approach 2:
The invention creates a composite material system combining the sumanene derivative compound with specific organic solvents and optional additives (crosslinkers, plasticizers, surfactants). This composite formulation achieves both the planarization capability of spin-coating and the etching resistance previously only achievable with CVD-C film.
3Strength
If conventional organic film materials are used to maintain high carbon content, then etching resistance is improved, but the materials are prone to sublimate components and film formability issues
Solution Approach 1:
The invention changes the molecular structure parameters by using sumanene derivatives with specific formulas (1)-(3) and carbon content ≥85 wt%. This structural parameter change reduces the tendency to sublimate while maintaining high carbon content, thereby improving both etching resistance and film formability reliability.
Solution Approach 2:
The invention discards conventional organic film materials that prone to sublimate and poor film formability. By selecting sumanene derivatives with optimized molecular weight and structural parameters, the invention recovers and achieves reliable film formation with high carbon content and etching resistance.
4Manufacturing precision
If a three-layer resist method is used to form high aspect ratio patterns, then pattern formation capability is improved, but twisting or bending of the organic film pattern occurs during subsequent dry etching
Solution Approach 1:
The invention changes the material parameters by using sumanene derivatives with carbon content ≥85 wt% and specific molecular structures. This parameter change enhances the mechanical strength and dimensional stability of the organic film pattern, preventing twisting or bending during subsequent dry etching processes while maintaining the pattern formation capability of the three-layer resist method.
Solution Approach 2:
The invention creates a composite organic film material with enhanced mechanical properties through the sumanene derivative composition. This composite material provides both the pattern formation capability required for high aspect ratio structures and the mechanical stability to prevent pattern distortion during etching.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition forms a dense, tough carbon film with excellent etching and twisting resistance, enabling precise patterning processes in multilayer resist methods, such as two-, three-, and four-layer resist processes, and improves film formability and planarization.
Implementation Method 1
a compound having a high carbon content and thermal curability
Implementation Method 2
formed by a spin-coating method is known to have an advantage that the step of the stepped substrate can be flatly embedded
Implementation Method 3
transferred to the silicon-containing resist intermediate film using a fluorocarbon-based dry etching gas
Data Source
AI summary
A composition for forming an organic film, including: a compound represented by the following general formula (1); and an organic solvent, wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination, wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R1 independently represents any one of groups represented by the following general formula (4), and wherein in the general formula (5), R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R3 represents any one of the following groups.