Organic Hardmask Layer Structure for Semiconductor Planarization

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Solution Overview

Problem

Conventional lithographic techniques face challenges in achieving precise pattern formation and planarization on substrates with complex patterns, particularly in minimizing step errors and ensuring etch resistance during multiple etching processes.

Innovation Solution

A method involving the formation of a first organic layer on a substrate with a solvent to remove a part of the layer, followed by applying a second organic layer through a curing process, using specific solvents and additives to create hardmask layers that improve planarization and etch resistance, allowing for the formation of precise patterns without separate etchback or CMP processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional lithographic technique is used to form patterns on a substrate, then the pattern formation process is straightforward, but step errors increase and planarization becomes difficult on substrates with complex patterns

Engineering Contradiction:
Improvepattern formation precisionVSAvoidsubstrate pattern complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The organic layer is divided into two distinct layers: a first organic layer applied over the entire substrate including patterned regions, and a second organic layer applied only in gap regions after selective removal of the first layer. This segmentation allows different regions to serve different functions - the first layer provides baseline coverage and the second layer provides targeted planarization in gap areas, resolving the contradiction between maintaining precision and handling substrate complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate receive different treatments: patterned regions retain the first organic layer while gap regions receive the second organic layer after solvent removal. This local differentiation enables precise control over planarization and etch resistance in specific areas, allowing the process to handle complex substrate patterns while maintaining manufacturing precision.

Inventive Principle:
Principle #3Local quality

2Reliability

If a single organic layer is formed on the substrate, then the process is simple, but etch resistance and planarization characteristics are insufficient

Engineering Contradiction:
Improveetch resistanceVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The single organic layer is segmented into two functional layers with distinct properties and purposes. The first organic layer provides baseline coverage and the second organic layer enhances etch resistance and planarization in critical gap regions. This segmentation improves reliability by providing targeted functionality in each layer while the overall process remains manageable.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses composite organic layer structures where two different organic materials are combined in a specific architecture. The first and second organic layers have different compositions and properties, creating a composite structure that achieves superior etch resistance and planarization characteristics compared to a single homogeneous layer, while maintaining process feasibility.

Inventive Principle:
Principle #40Composite materials

3Manufacturing precision

If solvent is applied to remove part of the first organic layer, then planarization is improved, but process complexity increases

Engineering Contradiction:
Improveplanarization uniformityVSAvoidprocess step complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

A solvent is introduced as an intermediary substance to selectively remove portions of the first organic layer. This intermediary enables precise planarization by dissolving and removing material in controlled manner, achieving uniform planarization across the substrate. The solvent acts as a mediator between the organic layer and the desired planarized state, improving precision while keeping the process step manageable.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves excellent planarization characteristics and minimizes CD errors, enhancing the uniformity and precision of pattern formation in semiconductor devices by using hardmask layers with improved etch resistance and heat resistance.

Implementation Method 1

applying a solvent on the first organic layer to remove a part of the first organic layer; The solvent may have solubility for the organic compound of the first composition

Methodology Applied
Scientific EffectSolvation: Solvation

Implementation Method 2

applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process

Methodology Applied
Scientific EffectCuring: Photopolymerisation

Data Source

PatentUS10312074B2Method of producing layer structure, layer structure, and method of forming patterns
Publication Date: 2019.06.04 SAMSUNG SDI CO LTD
  • US10312074B2 patent drawing
  • US10312074B2 patent drawing
  • US10312074B2 patent drawing

AI summary

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.