Organic Imaging Element With Oxide Interlayer for Faster Charge Transfer
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Solution Overview
Problem
Current stacked imaging elements face challenges in efficiently transferring signal charge from the photoelectric conversion layer to the FD electrode without delay, which affects the quality of captured images.
Innovation Solution
The proposed imaging element incorporates an inorganic oxide semiconductor material layer with a specific composition (MaNbSncO) between the first electrode and the photoelectric conversion layer, enhancing charge transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If an inorganic oxide semiconductor material layer with specific composition is introduced between the first electrode and the photoelectric conversion layer, then charge transfer efficiency is improved and signal delay is reduced, but device structure becomes more complex
Solution Approach 1:
The patent introduces an inorganic oxide semiconductor material layer as an intermediary component between the first electrode and the photoelectric conversion layer. This intermediate layer facilitates efficient charge transfer by providing optimal energy level alignment and charge carrier mobility, thereby reducing signal delay without requiring fundamental changes to the overall device architecture.
Solution Approach 2:
The patent employs composite material structure by combining organic photoelectric conversion layer with inorganic oxide semiconductor material layer. This composite approach leverages the advantages of both material types: the organic material provides excellent photoelectric conversion properties while the inorganic oxide semiconductor layer ensures efficient charge transfer, achieving superior overall performance.
2Device complexity
If a simple structure is maintained, then device complexity is reduced and manufacturing is easier, but charge transfer characteristics deteriorate and signal delay increases
Solution Approach 1:
The patent applies local quality principle by optimizing the specific region between the first electrode and the photoelectric conversion layer with a specially designed inorganic oxide semiconductor material layer. This localized optimization ensures excellent charge transfer characteristics at the critical interface without complicating the overall simple device structure, maintaining ease of manufacturing while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables superior charge transfer characteristics, reducing signal delay and improving image quality while maintaining a simple structure.
Implementation Method 1
an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer
Implementation Method 2
a photoelectric conversion layer including an organic material... perform photoelectric conversion of a specific color (wavelength band)
Data Source
AI summary
Provided is an imaging element that includes a photoelectric conversion section. The photoelectric conversion section includes a first electrode, a photoelectric conversion layer including an organic material, and a second electrode that are stacked, an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and when a composition of an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer is represented by MaNbSncO (where M denotes an aluminum (Al) atom, and N denotes a gallium atom (Ga) or a zinc (Zn) atom, or a gallium (Ga) atom and a zinc (Zn) atom), a+b+c=1.00, 0.01≤a≤0.04, and b<c are satisfied.