Organic Interlayer Bonding for Low-Temperature Die Stacking
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Solution Overview
Problem
The increasing complexity of semiconductor packages has led to challenges in making effective and reliable interconnections among components, resulting in higher ohmic loss, heat generation, and signal delay. There is a need for improved die-to-die bonding structures and methods to reduce interconnect lengths and enhance package integration.
Innovation Solution
The use of an organic base layer with carbon chain structures in a modified dielectric-to-dielectric bonding process, which allows for the formation of stronger bonds at reduced annealing temperatures, reduces internal stresses, and enables bonding of surfaces with greater roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional dielectric-to-dielectric bonding is used, then bonding can be achieved, but high annealing temperatures are required which generate internal stresses and limit surface roughness tolerance
Solution Approach 1:
An organic base layer comprising carbon chain structures is introduced as an intermediary between the first and second dielectric layers. This organic base layer facilitates bonding at reduced annealing temperatures by providing a molecular interface that enables stronger interfacial adhesion, thereby resolving the contradiction between lower temperature processing and maintaining bond strength.
Solution Approach 2:
The bonding structure employs a composite material system consisting of inorganic dielectric layers combined with an organic base layer. This composite approach leverages the complementary properties of organic and inorganic materials to achieve strong bonding at lower temperatures, overcoming the limitations of conventional single-material dielectric-to-dielectric bonding.
2Manufacturing precision
If conventional dielectric-to-dielectric bonding is used, then bonding can be achieved, but surfaces with roughness are difficult to bond effectively
Solution Approach 1:
The organic base layer serves as a mediator that accommodates surface roughness variations. Its molecular structure allows it to conform to irregular surfaces while maintaining effective bonding, thereby enabling reliable bonding of surfaces with greater roughness without compromising bond strength.
Solution Approach 2:
The introduction of the organic base layer changes the interfacial bonding parameters, allowing bonding to occur effectively on surfaces with higher roughness. The organic material's flexibility and molecular adaptability enable it to bridge surface irregularities that would prevent effective bonding in conventional dielectric-to-dielectric processes.
3Adaptability or versatility
If package size is increased to accommodate more components, then component capacity improves, but interconnect length increases leading to higher ohmic loss and heat generation
Solution Approach 1:
The patent employs segmentation by dividing the package into multiple stacked components (first component with first dielectric layer, second component with second dielectric layer) bonded together through the organic base layer. This vertical segmentation allows more components to be accommodated in a compact footprint, reducing the need for long lateral interconnects and thereby reducing ohmic loss and heat generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in dielectric-to-dielectric bonds with increased strength and reduced formation temperatures, minimizing internal stresses and accommodating rougher surfaces, thereby improving the reliability and efficiency of semiconductor package interconnections.
Implementation Method 1
an organic base layer with carbon chain structures in a modified dielectric-to-dielectric bonding process, which allows for the formation of stronger bonds
Data Source
AI summary
An embodiment semiconductor structure may include a first component having first electrical bonding structures formed within a first dielectric layer, a second component having second electrical bonding structures formed with a second dielectric layer, and an organic base layer formed between the first dielectric layer and the second dielectric layer. The organic base layer may include carbon chain structures such that the first dielectric layer is bonded to the second dielectric layer with bonds formed between the first dielectric layer, the organic base layer, and the second dielectric layer. The carbon chain structures may be characterized by a carbon number that is between 10 and 1000 and a hydrogen to carbon ratio H/C that is greater than 2 such that the organic base layer has a thickness that is 0.5 nm to 30 nm. The carbon chain structures may include functional groups that form bonds between the carbon chain structures.