Dual-Layer Copper Inductor in Organic Interposers for Bonding Strength

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Solution Overview

Problem

Existing fan-out wafer level package (FOWLP) interposers lack sufficient mechanical strength to withstand bonding processes, and existing inductor structures in semiconductor devices often rely on aluminum, which may not provide optimal conductivity and reliability.

Innovation Solution

The development of an organic interposer with a dual-layer inductor structure that includes a copper-based lower and upper conductive coil connected by a conductive via structure, eliminating the use of aluminum and enhancing conductivity and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If aluminum-based inductor structures are used, then manufacturing process is simpler, but conductivity and reliability are insufficient

Engineering Contradiction:
Improveinductor conductivity and reliabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter from aluminum to copper, which has superior electrical conductivity. This material substitution directly improves inductor conductivity and reliability while enabling new manufacturing approaches that resolve the complexity issue

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a dual-layer copper coil structure with conductive via structures connecting the layers, creating a composite inductor design. This composite approach optimizes both electrical performance and mechanical properties, achieving high reliability while maintaining manufacturability through systematic process integration

Inventive Principle:
Principle #40Composite materials

2Reliability

If single-layer inductor structure is used, then manufacturing is easier, but inductance and Q factor performance are insufficient

Engineering Contradiction:
Improveinductance and Q factor performanceVSAvoidinductor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from a single-layer to a dual-layer inductor structure, adding a vertical dimension to the design. The conductive via structures provide vertical interconnection between layers, effectively utilizing three-dimensional space to achieve enhanced inductance and Q factor performance while maintaining manufacturability through systematic process integration

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Strength

If interposer mechanical strength is insufficient, then bonding process cannot be withstood, but adding structural reinforcement may increase complexity

Engineering Contradiction:
Improveinterposer mechanical strengthVSAvoidinterposer structure complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent uses a composite interposer structure combining organic substrate material with integrated copper inductor layers and dielectric materials. This composite approach provides the necessary mechanical strength to withstand bonding processes while maintaining overall structural integration without adding separate reinforcement components

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent merges the structural reinforcement function with the electrical inductor function by integrating the copper coil structures directly into the interposer layers. The conductive via structures and dielectric layers serve both mechanical support and electrical connection purposes, eliminating the need for separate reinforcement structures

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12142582B2Organic interposer including a dual-layer inductor structure and methods of forming the same
Publication Date: 2024.11.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12142582B2 patent drawing
  • US12142582B2 patent drawing
  • US12142582B2 patent drawing

AI summary

An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.