Organic Interposer Dual-Layer Inductor for Stronger Copper Coil Bonding

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Solution Overview

Problem

Existing fan-out wafer level package (FOWLP) interposers lack sufficient mechanical strength to withstand bonding processes, and existing inductor structures in semiconductor devices often rely on aluminum, which may not provide optimal conductivity and durability.

Innovation Solution

The development of an organic interposer with a dual-layer inductor structure that includes a lower conductive coil, a conductive via structure, and an upper conductive coil made of copper, which are connected to provide a robust and efficient inductive path, eliminating the use of aluminum and enhancing mechanical strength.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional aluminum-based inductor structures are used, then manufacturing simplicity is maintained, but conductivity and durability are insufficient

Engineering Contradiction:
Improveconductivity and durabilityVSAvoidinductor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs a composite material strategy by combining copper (for the lower inductive coil) and aluminum (for the upper inductive coil) within a single inductor structure. This composite approach leverages the superior conductivity and durability of copper in the lower layer while utilizing aluminum's ease of manufacturing in the upper layer, thereby resolving the contradiction between reliability and manufacturing simplicity.

Inventive Principle:
Principle #40Composite materials

2Reliability

If single-layer inductor structures are used, then manufacturing process is simple, but inductance and Q factor are limited

Engineering Contradiction:
Improveinductance and Q factorVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from a single-layer to a dual-layer inductor configuration, adding a vertical dimension to the inductive structure. The lower copper coil and upper aluminum coil are stacked at different vertical levels and connected through conductive vias, effectively utilizing three-dimensional space to enhance inductance and Q factor while maintaining a relatively compact footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent merges two separate inductive coils (lower copper coil and upper aluminum coil) into a single integrated dual-layer inductor structure. The conductive vias facilitate electrical connection between the two layers, creating a unified inductive element that achieves enhanced performance through the combination of multiple materials and layers.

Inventive Principle:
Principle #5Merging (Combining)

3Strength

If aluminum is used for inductive coils, then ease of manufacture is maintained, but mechanical strength and conductivity are insufficient

Engineering Contradiction:
Improvemechanical strength and conductivityVSAvoidmanufacturing complexity
Core Design Contradiction:
StrengthVSEase of manufacture

Solution Approach 1:

The patent applies local quality by assigning different materials to different spatial locations within the inductor structure. The lower layer, which requires superior mechanical strength and conductivity to withstand bonding processes, is constructed with copper. The upper layer is made with aluminum, which is easier to manufacture. This localized material optimization resolves the contradiction between strength and ease of manufacture.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240379589A1Organic interposer including a dual-layer inductor structure and methods of forming the same
Publication Date: 2024.11.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240379589A1 patent drawing
  • US20240379589A1 patent drawing
  • US20240379589A1 patent drawing

AI summary

An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.