Organic Layer Composition for Semiconductor Pattern Planarization
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Solution Overview
Problem
Current semiconductor lithographic techniques face challenges in achieving effective pattern formation and planarization for ultra-fine patterns due to limitations in thermal shrinkage ratios and mechanical properties of organic layer materials.
Innovation Solution
An organic layer composition comprising a first compound with a thermal shrinkage ratio of 10% to 70% and a second compound with a smaller thermal shrinkage ratio, combined with a solvent, is developed. This composition is applied using a spin-on coating method and heat-treated to form a hardmask layer, enhancing gap-fill and planarization characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single organic layer material with high thermal shrinkage ratio is used to achieve gap-fill characteristics, then gap-fill improves, but planarization deteriorates
Solution Approach 1:
The patent applies composite materials by combining two distinct organic layer materials: a first material with high thermal shrinkage ratio (10-70%) for gap-fill, and a second material with low thermal shrinkage ratio for planarization. This composite approach allows simultaneous achievement of both gap-fill and planarization characteristics that cannot be obtained with a single material.
Solution Approach 2:
The patent implements local quality by assigning different functional properties to different materials in the composite structure. The first material specifically addresses gap-fill requirements in patterned regions, while the second material provides planarization across the entire surface, allowing each material to optimize its local function.
2Manufacturing precision
If organic layer materials with high thermal shrinkage ratio are used to improve gap-fill characteristics, then gap-fill improves, but etch resistance deteriorates
Solution Approach 1:
The composite structure combines a first material optimized for gap-fill with a second material providing etch resistance. The second material's low thermal shrinkage ratio and appropriate mechanical properties ensure sufficient etch resistance during subsequent processing steps, while the first material fills gaps in the patterned layer.
3Length of moving object
If ultra-fine pattern lithographic techniques are implemented to achieve smaller pattern sizes, then pattern dimension reduces, but manufacturing complexity increases
Solution Approach 1:
The patent changes the thermal and mechanical parameters of the organic layer materials to enable effective lithographic processing for ultra-fine patterns. By optimizing thermal shrinkage ratios and mechanical properties, the materials support advanced lithographic techniques required for smaller pattern dimensions.
Solution Approach 2:
The composite organic layer structure provides the combined mechanical and thermal properties needed for ultra-fine pattern formation, enabling advanced lithographic techniques to achieve smaller pattern sizes while maintaining processability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The organic layer composition demonstrates improved gap-fill characteristics, planarization, and etch resistance, enabling the formation of fine patterns without voids and ensuring mechanical stability during multiple etching processes.
Implementation Method 1
a first compound having a thermal shrinkage ratio of about 10% to about 70%, a second compound having a smaller thermal shrinkage ratio than the first compound
Data Source
AI summary
An organic layer composition includes a first compound having a thermal shrinkage ratio of about 10% to about 70%, a second compound having a smaller thermal shrinkage ratio than the first compound, and a solvent, and an organic layer obtained by curing the organic layer composition and a method of forming patterns using the organic layer composition are disclosed.A method of measuring the thermal shrinkage ratio is described in the detailed description.