Organic Layer Composition for Ultra-Fine Patterning Hardmask
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Solution Overview
Problem
Current ultra-fine patterning techniques face challenges in achieving precise and efficient pattern formation due to limitations in lithographic methods, particularly in forming fine patterns with excellent profiles and etch resistance, especially when using spin-on coating methods.
Innovation Solution
A monomer and polymer composition represented by specific chemical formulas are used to create an organic layer composition that includes a solvent, which is applied via spin-on coating to form a hardmask layer, enabling improved etch resistance and planarization, and subsequent pattern formation through selective etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used for ultra-fine patterning, then the process is relatively simple and well-established, but the pattern profile quality and etch resistance are insufficient
Solution Approach 1:
The patterning process is divided into multiple stages: first forming a mandrel pattern, then using it to create a sacrificial layer, and finally forming the final pattern. This multi-stage approach allows each step to be optimized independently, achieving fine pattern profiles with excellent etch resistance while maintaining process feasibility
Solution Approach 2:
A sacrificial layer is introduced as an intermediary element between the mandrel pattern and the final pattern. This sacrificial layer (formed from the organic layer composition) enables precise pattern transfer and provides the necessary etch resistance, while being selectively removable to complete the patterning process
2Reliability
If spin-on coating method is used to form the organic layer, then the application process is simple and cost-effective, but the film density and etch resistance are insufficient
Solution Approach 1:
The molecular structure of the organic layer composition is specifically designed with parameters optimized for etch resistance. The composition includes monomers and polymers with specific functional groups and molecular weights that enhance film density and etch resistance while maintaining spin-on coating processability
Solution Approach 2:
The organic layer composition is formulated as a composite material containing specific monomers, polymers, and solvents in optimized ratios. This composite structure provides both the ease of spin-on coating application and the required film density and etch resistance for ultra-fine patterning
3Manufacturing precision
If the organic layer composition is optimized for etch resistance, then the pattern fidelity improves, but the film formation process becomes more complex
Solution Approach 1:
The organic layer composition is designed with specific local molecular structures and functional groups that provide enhanced etch resistance at critical interfaces, while maintaining overall composition simplicity for easy processing. The molecular architecture is optimized locally to achieve maximum pattern fidelity
4Length of moving object
If fine patterns are formed with tighter dimensions, then the device feature size reduces, but the etch resistance and profile quality deteriorate
Solution Approach 1:
The organic layer is formed and cured to create a robust sacrificial structure before the final pattern etching step. This preliminary structure provides the necessary etch resistance and profile support for subsequent fine pattern formation, enabling tight feature sizes without compromising etch resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances etch resistance and planarization characteristics, allowing for the formation of fine patterns with improved film density and bulk etch resistance, addressing the limitations of existing techniques in ultra-fine patterning.
Implementation Method 1
applying the organic layer composition as claimed in claim 19 on the material layer
Implementation Method 2
curing the organic layer composition to form a hardmask layer
Implementation Method 3
exposing and developing the photoresist layer to form a photoresist pattern
Implementation Method 4
etching the material layer using the photoresist pattern as a mask
Data Source
AI summary
A monomer, a polymer, an organic layer composition, an organic layer and associated methods, the monomer being represented by Chemical Formula 1: