Organic Semiconducting Layer Composition for Uniform Single-Source Evaporation
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Solution Overview
Problem
Existing methods for preparing organic semiconducting layers in organic electronic devices, such as OLEDs, result in poor lateral uniformity and reduced performance due to the use of separate vacuum thermal evaporation sources for different compounds, leading to instability and suboptimal thermal properties.
Innovation Solution
A method involving a single vacuum thermal evaporation source is used to transfer a composition comprising a first organic compound with specific dipole moment and molecular weight ranges, along with a metal borate compound, into the gas phase to form a homogeneous organic semiconducting layer, avoiding the formation of metal borate compounds and improving conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate vacuum thermal evaporation sources are used for different compounds, then the preparation process can be performed, but the lateral uniformity of the organic semiconducting layer deteriorates and performance is reduced
Solution Approach 1:
The patent combines multiple compounds (organic semiconductor compound and metal borate compound) into a single composition that is evaporated from one vacuum thermal evaporation source. This merging approach ensures simultaneous deposition of both compounds, achieving homogeneous mixing and excellent lateral uniformity across the substrate, thereby resolving the contradiction between manufacturing precision and device complexity.
2Manufacturing precision
If a single vacuum thermal evaporation source is used to evaporate multiple compounds, then lateral uniformity is improved, but the thermal properties and heat conductivity in the VTE source deteriorate
Solution Approach 1:
The patent changes the physical state parameter of the composition by selecting compounds with appropriate melting points. The organic semiconductor compound has a melting point of 80°C to 200°C, allowing it to melt and form a liquid state in the VTE source, which dramatically improves heat conductivity and thermal properties while maintaining homogeneous evaporation and lateral uniformity.
3Reliability
If metal borate compound is evaporated alone, then the layer can be formed, but the conductivity is reduced and performance is suboptimal
Solution Approach 1:
The patent creates a composite material system where metal borate compound (providing conductivity) is combined with organic semiconductor compound (providing semiconducting properties). This composite composition achieves synergistic effects, delivering excellent conductivity and semiconducting performance simultaneously while maintaining process simplicity through single-source evaporation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a homogeneous organic semiconducting layer with improved conductivity, resulting in lower operating voltage and longer battery life, particularly in mobile electronic devices.
Implementation Method 1
a single vacuum thermal evaporation source is used to transfer a composition comprising a first organic compound with specific dipole moment and molecular weight ranges, along with a metal borate compound, into the gas phase
Implementation Method 2
depositing them on the substrate to form the organic semiconducting layers
Data Source
AI summary
The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C10-C30 condensed aryl group and/or at least one unsubstituted or substituted C3-C30 heteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a C1 to C22 silyl group, (iv) a C1 to C30 alkyl group, (v) a C to C10 alkylsilyl group, (vi) a C6 to C22 arylsilyl group, (vii) a C3 to C30 cycloalkyl group, (viii) a C2 to C30 heterocycloalkyl group, (ix) a C6 to C30 aiyl group, (x) a C2 to C30 heteroaryl group, (xi) a C1 to C30 perfluoro-hydrocarbyl group, or (xii) a C1 to C10 trifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer; a composition for use therein, and an organic electronic device prepared this way.