Organic Mandrel Hardening With DCS Silicon Coating for Spacer Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in semiconductor manufacturing lies in the removal of relatively harder mandrel materials like silicon nitride or amorphous silicon, which lack material selectivity, leading to potential collapse or etching during deposition steps, making carbon-based mandrels unsuitable for current applications.
Innovation Solution
A direct current superposition (DCS) plasma treatment is applied to form a protective silicon-based layer on the outer portion of an organic mandrel, enhancing its structural integrity and protecting it during spacer deposition and subsequent fabrication stages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If carbon-based mandrels are used, then ease of removal is improved, but structural integrity during deposition deteriorates (collapse or etching occurs)
Solution Approach 1:
The patent applies composite materials by combining carbon-based mandrel material with a protective coating layer. The carbon mandrel provides ease of removal through selective etching, while the protective coating (such as silicon nitride or other inorganic materials) provides structural integrity during deposition processes. This composite structure allows the mandrel to maintain its shape and resist collapse during spacer deposition while remaining removable through selective chemical etching processes.
Solution Approach 2:
The protective coating acts as an intermediary layer between the carbon mandrel and the deposition environment. This intermediate layer protects the carbon mandrel from direct exposure to harsh deposition conditions that would cause collapse or etching, while allowing the mandrel to be removed later through selective etching of the carbon material.
2Reliability
If harder mandrel materials like silicon nitride are used, then structural integrity is improved, but ease of removal deteriorates (lack of material selectivity)
Solution Approach 1:
The patent applies local quality by providing different material properties at different locations or layers. The protective coating has high structural integrity to prevent collapse, while the carbon mandrel core maintains ease of removal through selective etching. This spatial differentiation of material properties allows the structure to simultaneously exhibit both high integrity during deposition and easy removal through selective chemical processes.
Solution Approach 2:
The composite structure combines materials with complementary properties: the outer protective layer (silicon nitride or other inorganic materials) provides structural integrity and resistance to deposition conditions, while the inner carbon-based mandrel provides ease of removal through selective etching. This composite approach resolves the contradiction between integrity and removability.
3Ease of manufacture
If carbon-based mandrels are used, then ease of removal is improved, but downstream process compatibility deteriorates (unsuitable for current applications)
Solution Approach 1:
The protective coating serves as an intermediary that enables carbon mandrels to be compatible with downstream processes. The coating protects the carbon mandrel during deposition and other sensitive downstream operations, making the carbon-based approach suitable for current semiconductor manufacturing processes while maintaining the ease of removal advantage.
Solution Approach 2:
The composite structure of carbon mandrel with protective coating enables compatibility with downstream processes by preventing carbon collapse and etching during deposition, while preserving the ease of removal through selective etching of the carbon material in subsequent steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The DCS treatment hardens the organic mandrel, preventing collapse and etching, ensuring its integrity during spacer deposition and subsequent processes, thereby maintaining the mandrel's presence in the semiconductor device fabrication.
Implementation Method 1
The DCS treatment can deposit or form a protective layer (e.g., a thin layer) of silicon along the outer layer of the mandrel
Data Source
AI summary
Methods of manufacturing a semiconductor device are disclosed. The method includes providing a structure comprising an organic mandrel formed in a pattern and an underlying layer. The method includes hardening the organic mandrel including forming a silicon-based layer along an outer portion of the organic mandrel. The method includes depositing a spacer layer over the hardened organic mandrel.